VLSI Electronics: Microstructure Science, Volume 7 presents a comprehensive exposition and assessment of the developments and trends in VLSI (Very Large Scale Integration) electronics. This treatise covers subjects that range from microscopic aspects of materials behavior and device performance to the comprehension of VLSI in systems applications. Each chapter is prepared by a recognized authority. The topics contained in this volume include a basic introduction to the application of superconductivity in high-speed digital systems; the expected impact of VLSI technology on the implementation of AI (artificial intelligence); the limits to improvement of silicon integrated circuits; and the various spontaneous noise sources in VLSI circuits and their effect on circuit operation. Scientists, engineers, researchers, device designers, and systems architects will find the book very useful.

VLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.

VLSI Electronics: Microstructure Science, Volume 1 assesses trends for the future of very large scale integration (VLSI) electronics and the scientific base that supports its development. This book discusses the manufacturing process technology for MOS VLSI, principles of optical lithography, and resolution limitations for submicron lithography. The research and resource at the national submicron facility, limitations of small devices and large systems, and physics and modeling of submicron insulated-gate field-effect transistors are also elaborated. This text likewise covers the government role in VLSI and VLSI as a major new tool for productivity improvement. This volume is suitable for scientists and engineers who wish to become familiar with VLSI electronics, device designers concerned with the fundamental character of and limitations to device performance, systems architects who will be charged with tying VLSI circuits together, and engineers conducting work on the utilization of VLSI circuits in specific areas of application.

VLSI Electronics