This document is the third annual report on research conducted under the auspices of the Joint Services Electronics Program at Cornell University. The research has been organized under the integrated theme 'Ultra-High Speed Compound Semiconductor Photonics.' Results on OMVPE materials growth, femtosecond optical probing of thin films, quantum wells and-device structures, ensemble Monte Carlo simulation of pump-and-probe thin film experiments and optoelectronic detectors, design and fabrication of strain compensated multi-quantum-well high speed vertical cavity lasers, and fabrication of integrated high speed metal-semiconductor-metal light detectors. Work has progressed according to plan. This research will continue under a new three year contract.

Significant growth stimulation by laser irradiation during the OMVPE process is only possible in the kinetically limited regime, which is traditionally avoided. We thus carried out a detailed study on the material properties of low temperature grown AlGaAs and on the reaction mechanisms involved in its synthesis. Growth conditions were similar to those employed during the excimer laser stimulation experiments.

With the ongoing, worldwide installation of 40 Gbit/s fiber optic transmission systems, there is an urgency to learn more about the photonic devices supporting this technology. Focusing on the components used to generate, modulate, and receive optical signals, High-Speed Photonic Devices presents the state-of- the-art enabling technologies behind h

This proceeding is a collection of selected papers presented at Symposium O of Compound Semiconductor Photonics in the International Conference on Materials for Advanced Technology (ICMAT), which was held in Singapore from 28 June to 3 July 2009. The symposium covers a wide range of topics from fundamental semiconductor materials study to photonic device fabrication and application. The papers collected are of recent progress in the active and wide range of semiconductor photonics research. They include materials-related papers on III-As/P, III-nitride, quantum dot/wire/dash growth, ZnO, and chalcogenide, and devices-related papers on photonic crystals, VCSEL, quantum dot/dash lasers, LEDs, waveguides, solar cells and heterogeneous integrat

Silicon Photonics, Volume 99 in the Semiconductors and Semimetals series, highlights new advances in the field, with this updated volume presenting interesting chapters on Transfer printing in Silicon Photonics, Epitaxial integration of antimonide-based semiconductor lasers on Si, Photonic crystal lasers and nanolasers on Si, the Evolution of monolithic quantum-dot light source for silicon photonics, III-V on Si nanocomposites, the Heterogeneous integration of III-V on Si by bonding, the Growth of III-V on Silicon compliant substrates and lasers by MOCVD, Photonic Integrated Circuits on Si, Integrated Photonics for Bio- and Environmental sensing, Membrane Lasers/Photodiodes on Si, and more. Provides the authority and expertise of leading contributors from an international board of authors Represents the latest release in the Semiconductors and Semimetals series Updated release includes the latest information on Silicon Photonics

Future Directions in Silicon Photonics, Volume 101 in the Semiconductors and Semimetals series, highlights new advances in the field, with this updated volume presenting the latest developments as discussed by esteemed leaders in the field silicon photonics. Provides the authority and expertise of leading contributors from an international board of authors Represents the latest release in the Semiconductors and Semimetals series Includes the latest information on Silicon Photonics

Dramatic increases in processing power have rapidly scaled on-chip aggregate bandwidths into the Tb/s range. This necessitates a corresponding increase in the amount of data communicated between chips, so as not to limit overall system performance. To meet the increasing demand for interchip communication bandwidth, researchers are investigating the use of high-speed optical interconnect architectures. Unlike their electrical counterparts, optical interconnects offer high bandwidth and negligible frequency-dependent loss, making possible per-channel data rates of more than 10 Gb/s. High-Speed Photonics Interconnects explores some of the groundbreaking technologies and applications that are based on photonics interconnects. From the Evolution of High-Speed I/O Circuits to the Latest in Photonics Interconnects Packaging and Lasers Featuring contributions by experts from academia and industry, the book brings together in one volume cutting-edge research on various aspects of high-speed photonics interconnects. Contributors delve into a wide range of technologies, from the evolution of high-speed input/output (I/O) circuits to recent trends in photonics interconnects packaging. The book discusses the challenges associated with scaling I/O data rates and current design techniques. It also describes the major high-speed components, channel properties, and performance metrics. The book exposes readers to a myriad of applications enabled by photonics interconnects technology. Learn about Optical Interconnect Technologies Suitable for High-Density Integration with CMOS Chips This richly illustrated work details how optical interchip communication links have the potential to fully leverage increased data rates provided through complementary metal-oxide semiconductor (CMOS) technology scaling at suitable power-efficiency levels. Keeping the mathematics to a minimum, it gives engineers, researchers, graduate students, and entrepreneurs a comprehensive overview of the dynamic landscape of high-speed photonics interconnects.