Two-step MOVPE, in-situ etching and buried implantation: applications to the realization of GaAs laser diodes
Title | Two-step MOVPE, in-situ etching and buried implantation: applications to the realization of GaAs laser diodes PDF eBook |
Author | Pietro della Casa |
Publisher | Cuvillier Verlag |
Pages | 250 |
Release | 2021-03-25 |
Genre | Science |
ISBN | 3736963971 |
This work is about two-step epitaxial growth using metalorganic vapor-phase epitaxy (MOVPE) for the realization of edge-emitting near-infrared laser diodes. The fabricated gallium arsenide-based devices fall into two categories: high-power lasers (watt range, multimodal) and tunable lasers (milliwatt range, monomodal). Common to both cases is that surface contamination – particularly that due to oxygen – needs to be removed before regrowth. Thus, in-situ etching with carbon tetrabromide (CBr4) is first studied. The experimental results include kinetic data, the effects of different etching conditions as well as substrate characteristics, and the effectiveness in reducing surface contamination. These investigations pave the way to devices based on 2-step epitaxy combined with in-situ etching. Correspondingly, thermally-tuned SG-DBR lasers operating around 975 nm have been successfully realized, obtaining a tuning range of 21 nm. In addition, the possibility of using electronic tuning in similar devices has been explored. High-power broad-area lasers have also been realized, using two-step epitaxy combined with ex-situ and in-situ etching, to create a buried, shallow “mesa” containing the active zone. This approach allows introducing lateral electrical and optical confinement, and – simultaneously – non-absorbing mirrors at the laser facets. Additionally, a different strategy to create a buried current aperture is presented, which is based on ion implantation followed by epitaxial regrowth. This enables to improve device performance and simultaneously introduce non-absorbing mirrors at the facets with correspondingly increased reliability.
Physics Briefs
Title | Physics Briefs PDF eBook |
Author | |
Publisher | |
Pages | 826 |
Release | 1991 |
Genre | Physics |
ISBN |
Electrical & Electronics Abstracts
Title | Electrical & Electronics Abstracts PDF eBook |
Author | |
Publisher | |
Pages | 1904 |
Release | 1997 |
Genre | Electrical engineering |
ISBN |
Chemical Abstracts
Title | Chemical Abstracts PDF eBook |
Author | |
Publisher | |
Pages | 2002 |
Release | 2002 |
Genre | Chemistry |
ISBN |
Applied Nanophotonics
Title | Applied Nanophotonics PDF eBook |
Author | Sergey V. Gaponenko |
Publisher | Cambridge University Press |
Pages | 453 |
Release | 2019 |
Genre | Science |
ISBN | 1107145503 |
An accessible yet rigorous introduction to nanophotonics, covering basic principles, technology, and applications in lighting, lasers, and photovoltaics. Providing a wealth of information on materials and devices, and over 150 color figures, it is the 'go-to' guide for students in electrical engineering taking courses in nanophotonics.
International Aerospace Abstracts
Title | International Aerospace Abstracts PDF eBook |
Author | |
Publisher | |
Pages | 980 |
Release | 1998 |
Genre | Aeronautics |
ISBN |
High-Power Diode Lasers
Title | High-Power Diode Lasers PDF eBook |
Author | Roland Diehl |
Publisher | Springer Science & Business Media |
Pages | 420 |
Release | 2003-07-01 |
Genre | Science |
ISBN | 3540478523 |
Starting from the basics of semiconductor lasers with emphasis on the generation of high optical output power the reader is introduced in a tutorial way to all key technologies required to fabricate high-power diode-laser sources. Various applications are exemplified.