Two-step MOVPE, in-situ etching and buried implantation: applications to the realization of GaAs laser diodes

Two-step MOVPE, in-situ etching and buried implantation: applications to the realization of GaAs laser diodes
Title Two-step MOVPE, in-situ etching and buried implantation: applications to the realization of GaAs laser diodes PDF eBook
Author Pietro della Casa
Publisher Cuvillier Verlag
Pages 250
Release 2021-03-25
Genre Science
ISBN 3736963971

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This work is about two-step epitaxial growth using metalorganic vapor-phase epitaxy (MOVPE) for the realization of edge-emitting near-infrared laser diodes. The fabricated gallium arsenide-based devices fall into two categories: high-power lasers (watt range, multimodal) and tunable lasers (milliwatt range, monomodal). Common to both cases is that surface contamination – particularly that due to oxygen – needs to be removed before regrowth. Thus, in-situ etching with carbon tetrabromide (CBr4) is first studied. The experimental results include kinetic data, the effects of different etching conditions as well as substrate characteristics, and the effectiveness in reducing surface contamination. These investigations pave the way to devices based on 2-step epitaxy combined with in-situ etching. Correspondingly, thermally-tuned SG-DBR lasers operating around 975 nm have been successfully realized, obtaining a tuning range of 21 nm. In addition, the possibility of using electronic tuning in similar devices has been explored. High-power broad-area lasers have also been realized, using two-step epitaxy combined with ex-situ and in-situ etching, to create a buried, shallow “mesa” containing the active zone. This approach allows introducing lateral electrical and optical confinement, and – simultaneously – non-absorbing mirrors at the laser facets. Additionally, a different strategy to create a buried current aperture is presented, which is based on ion implantation followed by epitaxial regrowth. This enables to improve device performance and simultaneously introduce non-absorbing mirrors at the facets with correspondingly increased reliability.

Physics Briefs

Physics Briefs
Title Physics Briefs PDF eBook
Author
Publisher
Pages 826
Release 1991
Genre Physics
ISBN

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Electrical & Electronics Abstracts

Electrical & Electronics Abstracts
Title Electrical & Electronics Abstracts PDF eBook
Author
Publisher
Pages 1904
Release 1997
Genre Electrical engineering
ISBN

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Chemical Abstracts

Chemical Abstracts
Title Chemical Abstracts PDF eBook
Author
Publisher
Pages 2002
Release 2002
Genre Chemistry
ISBN

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Applied Nanophotonics

Applied Nanophotonics
Title Applied Nanophotonics PDF eBook
Author Sergey V. Gaponenko
Publisher Cambridge University Press
Pages 453
Release 2019
Genre Science
ISBN 1107145503

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An accessible yet rigorous introduction to nanophotonics, covering basic principles, technology, and applications in lighting, lasers, and photovoltaics. Providing a wealth of information on materials and devices, and over 150 color figures, it is the 'go-to' guide for students in electrical engineering taking courses in nanophotonics.

International Aerospace Abstracts

International Aerospace Abstracts
Title International Aerospace Abstracts PDF eBook
Author
Publisher
Pages 980
Release 1998
Genre Aeronautics
ISBN

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High-Power Diode Lasers

High-Power Diode Lasers
Title High-Power Diode Lasers PDF eBook
Author Roland Diehl
Publisher Springer Science & Business Media
Pages 420
Release 2003-07-01
Genre Science
ISBN 3540478523

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Starting from the basics of semiconductor lasers with emphasis on the generation of high optical output power the reader is introduced in a tutorial way to all key technologies required to fabricate high-power diode-laser sources. Various applications are exemplified.