Over the last 25 years, dynamical mean-field theory (DMFT) has emerged as one of the most powerful new developments in many-body physics. Written by one of the key researchers in the field, this book presents the first comprehensive treatment of this ever-developing topic. Transport in Mutlilayered Nanostructures is varied and modern in its scope, and:A series of over 50 problems help develop the skills to allow readers to reach the level of being able to contribute to research. This book is suitable for an advanced graduate course in DMFT, and for individualized study by graduate students, postdoctoral fellows and advanced researchers wishing to enter the field.

"Over the last 25 years, dynamical mean-field theory (DMFT) has emerged as one of the most powerful new developments in many-body physics. Written by one of the key researchers in the field, this book presents the first comprehensive treatment of this ever-developing topic. Transport in Mutlilayered Nanostructures is varied and modern in its scope, and: Develops the formalism of many-body Green's functions using the equation-of-motion approach Applies DMFT to study transport in multilayered nanostructures, which is likely to be one of the most prominent applications of nanotechnology in the coming years Develops formalism first for the bulk and then for the inhomogeneous multilayered systems Describes in great detail the science behind the metal-insulator transition, electronic charge reconstruction, strongly correlated contributions to capacitance, and superconductivity Includes complete derivations and emphasizes how to carry out numerical calculations, including discussions of parallel programming algorithms Provides descriptions of the crossover from tunneling to thermally activated transport, of the properties of Josephson junctions with barriers tuned near the metal-insulator transition of thermoelectric coolers and power generators and of nonequilibrium extensions to determine current-voltage characteristics as applications of the theory A series of over 40 problems help develop the skills to allow readers to reach the level of being able to contribute to research. This book is suitable for an advanced graduate course in DMFT, and for individualized study by graduate students, postdoctoral fellows and advanced researchers wishing to enter the field"--

This novel book is the first comprehensive text on dynamical mean-field theory (DMFT), which has emerged over the past two decades as one of the most powerful new developments in many-body physics. Written by one of the key researchers in the field, the volume develops the formalism of many-body Green's functions using the equation of motion approach, which requires an undergraduate solid state physics course and a graduate quantum mechanics course as prerequisites. The DMFT is applied to study transport in multilayered nanostructures, which is likely to be one of the most prominent applications of nanotechnology in the coming years. The text is modern in scope focusing on exact numerical methods rather than the perturbation theory. Formalism is developed first for the bulk and then for the inhomogeneous multilayered systems. The science behind the metal-insulator transition, electronic charge reconstruction, and superconductivity are thoroughly described. The book covers complete derivations and emphasizes how to carry out numerical calculations, including discussions of parallel programing algorithms. Detailed descriptions of the crossover from tunneling to thermally activated transport, of the properties of Josephson junctions with barriers tuned near the metal-insulator transition, and of thermoelectric coolers and power generators are provided as applications of the theory./a

Recent advances in strongly correlated materials have produced systems with novel and interesting properties like high Tc superconductors, Mott insulators and others. These novel properties have sparked an interest in industry as well as in academia as new devices are being developed. One such kind of device that can be fabricated is a heterostructure, in which layers of different compounds are stacked in a single direction. Modern deposition techniques like electron beam epitaxy, in which atomic layers of different materials are deposited one at a time creating the device, are capable of fabricating heterostructures with atomic precision. We propose a technique to study heterostructures composed of strongly correlated materials out of equilibrium. By using the Keldysh Green's function formalism in the dynamical mean field theory (DMFT) framework the properties of a multilayered device are analyzed. The system is composed of infinite dimensional 2D lattices, stacked in the z direction. The first and last planes are then connected to a bulk reservoir, and several metallic planes are used to connect the bulk reservoir to the barrier region. The barrier region is the system of interest, also known as the device. The device is composed of a number of planes where the system correlations have been turned on. The correlations are then model by using the Falicov-Kimball Hamiltonian. The device is then connected to the bulk once again from the opposite side using metallic planes creating a symmetric system. In order to study the non equilibrium properties of the device a linear vector potential A(t) = A0 + tE is turned on a long time in the past for a unit of time and then turned off. This in turn will create a current in the bulk, in effect current biasing the device, as opposed to a voltage bias in which opposite sides of the device are held to a different potential. In this document we will explain the importance of the subject, we will derive and develop the algorithm and we will discuss results and challenges obtained from performing the numerical calculations.

The advent of semiconductor structures whose characteristic dimensions are smaller than the mean free path of carriers has led to the development of novel devices, and advances in theoretical understanding of mesoscopic systems or nanostructures. This book has been thoroughly revised and provides a much-needed update on the very latest experimental research into mesoscopic devices and develops a detailed theoretical framework for understanding their behaviour. Beginning with the key observable phenomena in nanostructures, the authors describe quantum confined systems, transmission in nanostructures, quantum dots, and single electron phenomena. Separate chapters are devoted to interference in diffusive transport, temperature decay of fluctuations, and non-equilibrium transport and nanodevices. Throughout the book, the authors interweave experimental results with the appropriate theoretical formalism. The book will be of great interest to graduate students taking courses in mesoscopic physics or nanoelectronics, and researchers working on semiconductor nanostructures.

The advent of semiconductor structures whose characteristic dimensions are smaller than the mean free path of carriers has led to the development of novel devices, and advances in theoretical understanding of mesoscopic systems or nanostructures. This book has been thoroughly revised and provides a much-needed update on the very latest experimental research into mesoscopic devices and develops a detailed theoretical framework for understanding their behaviour. Beginning with the key observable phenomena in nanostructures, the authors describe quantum confined systems, transmission in nanostructures, quantum dots, and single electron phenomena. Separate chapters are devoted to interference in diffusive transport, temperature decay of fluctuations, and non-equilibrium transport and nanodevices. Throughout the book, the authors interweave experimental results with the appropriate theoretical formalism. The book will be of great interest to graduate students taking courses in mesoscopic physics or nanoelectronics, and researchers working on semiconductor nanostructures.

Transport Phenomena in Micro- and Nanoscale Functional Materials and Devices offers a pragmatic view on transport phenomena for micro- and nanoscale materials and devices, both as a research tool and as a means to implant new functions in materials. Chapters emphasize transport properties (TP) as a research tool at the micro/nano level and give an experimental view on underlying techniques. The relevance of TP is highlighted through the interplay between a micro/nanocarrier's characteristics and media characteristics: long/short-range order and disorder excitations, couplings, and in energy conversions. Later sections contain case studies on the role of transport properties in functional nanomaterials. This includes transport in thin films and nanostructures, from nanogranular films, to graphene and 2D semiconductors and spintronics, and from read heads, MRAMs and sensors, to nano-oscillators and energy conversion, from figures of merit, micro-coolers and micro-heaters, to spincaloritronics. Presents a pragmatic description of electrical transport phenomena in micro- and nanoscale materials and devices from an experimental viewpoint Provides an in-depth overview of the experimental techniques available to measure transport phenomena in micro- and nanoscale materials Features case studies to illustrate how each technique works Highlights emerging areas of interest in micro- and nanomaterial transport phenomena, including spintronics