The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book shares results and physical models related to MOSFETs and to discuss innovative approaches necessary to continue the transistor scaling. Expanded versions of presentations in the areas of technology development are featured

This book investigates the fundamental properties and response of materials in extreme environments such as static and dynamic high pressure, high strain and high strain-rates, high radiation and electromagnetic fields, high and low temperatures, corrosive conditions, environments causing embrittlement, and environments containing atomic oxygen. This is an extremely active and vibrant field of research, in particular because it is now possible to create laboratory conditions similar in pressure, temperature and radiation to those found in planetary interiors and in space. In addition, advanced simulation methods, coupled with high-performance computing platforms, now afford predictions - on a first-principles basis - of the properties of materials in extreme environments. Scientists from a broad spectrum of fields are represented, including space science, planetary science, high-pressure research, shock physics, ultrafast science, and energetic materials research.

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

For the past four decades, geometric scaling of silicon CMOS transistors has enabled not only an exponential increase in circuit integration density -Moore's Law - but also a corresponding enhancement in the transistor performance. Simple MOSFET geometric scaling has driven the industry to date. However, as the transistor gate lengths drop below 35nm and the gate oxide thickness is reduced to 1nm, physical limitations such as off-state leakage current and power density make geometric scaling an increasingly challenging task. In order to continue CMOS device scaling, innovations in device structures and materials are required and the industry needs a new scaling vector. Starting at the 90 and 65nm technology generation, strained silicon has emerged as one such innovation. Other device structures such as multigate FETs may be introduced to meet the scaling challenge. This book shares results and physical models related to MOSFETs and to discuss innovative approaches necessary to continue the transistor scaling. Expanded versions of presentations in the areas of technology development are featured

This volume from the 2006 MRS Spring Meeting focuses on fundamental materials science and device research for current transistor technologies. Materials scientists come together with silicon technologists and TCAD researchers and activation technologies for integrated circuits, to discuss current achievements research directions.