A comprehensive guide to TSV and other enabling technologies for 3D integration Written by an expert with more than 30 years of experience in the electronics industry, Through-Silicon Vias for 3D Integration provides cutting-edge information on TSV, wafer thinning, thin-wafer handling, microbumping and assembly, and thermal management technologies. Applications to highperformance, high-density, low-power-consumption, wide-bandwidth, and small-form-factor electronic products are discussed. This book offers a timely summary of progress in all aspects of this fascinating field for professionals active in 3D integration research and development, those who wish to master 3D integration problem-solving methods, and anyone in need of a low-power, wide-bandwidth design and high-yield manufacturing process for interconnect systems. Coverage includes: Nanotechnology and 3D integration for the semiconductor industry TSV etching, dielectric-, barrier-, and seed-layer deposition, Cu plating, CMP, and Cu revealing TSVs: mechanical, thermal, and electrical behaviors Thin-wafer strength measurement Wafer thinning and thin-wafer handling Microbumping, assembly, and reliability Microbump electromigration Transient liquid-phase bonding: C2C, C2W, and W2W 2.5D IC integration with interposers 3D IC integration with interposers Thermal management of 3D IC integration 3D IC packaging

Three-dimensional (3D) integration is identified as a possible avenue for continuous performance growth in integrated circuits (IC) as the conventional scaling approach is faced with unprecedented challenges in fundamental and economic limits. Wafer level 3D IC can take several forms, and they usually include a stack of several thinned IC layers th

The first encompassing treatise of this new, but very important field puts the known physical limitations for classic 2D electronics into perspective with the requirements for further electronics developments and market necessities. This two-volume handbook presents 3D solutions to the feature density problem, addressing all important issues, such as wafer processing, die bonding, packaging technology, and thermal aspects. It begins with an introductory part, which defines necessary goals, existing issues and relates 3D integration to the semiconductor roadmap of the industry. Before going on to cover processing technology and 3D structure fabrication strategies in detail. This is followed by fields of application and a look at the future of 3D integration. The contributions come from key players in the field, from both academia and industry, including such companies as Lincoln Labs, Fraunhofer, RPI, ASET, IMEC, CEA-LETI, IBM, and Renesas.

This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance and nearby contact effects. Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor and inductive-based communication system and bandpass filtering.

A comprehensive guide to 3D IC integration and packaging technology3D IC Integration and Packaging fully explains the latest microelectronics techniques for increasing chip density and maximizing performance while reducing power consumption. Based on a course developed by its author, this practical guide offers real-world problem-solving methods and teaches the trade-offs inherent in making system-level decisions. Explore key enabling technologies such as TSV, thin-wafer strength measurement and handling, microsolder bumping, redistribution layers, interposers, wafer-to-wafer bonding, chip-to-wafer bonding, 3D IC and MEMS, LED, and complementary metal-oxide semiconductor image sensors integration. Assembly, thermal management, and reliability are covered in complete detail.3D IC Integration and Packaging covers:• 3D integration for semiconductor IC packaging• Through-silicon vias modeling and testing• Stress sensors for thin-wafer handling and strength measurement• Package substrate technologies• Microbump fabrication, assembly, and reliability• 3D Si integration• 2.5D/3D IC integration• 3D IC integration with passive interposer• Thermal management of 2.5D/3D IC integration• Embedded 3D hybrid integration• 3D LED and IC integration• 3D MEMS and IC integration• 3D CMOS image sensors and IC integration• PoP, chip-to-chip interconnects, and embedded fan-out WLP

Scientist and engineers as well as graduate students in the fields of This conference will be of interest to anyone involved in Physics, Electrical Engineering, Materials Science and Engineering, Reliability and Quality Management, both in industry and academia. One current challenge to micro- and nanoelectronics is the understanding of stress-related phenomena in 3D IC integration. Stresses arising in 3D TSV interconnects and in the surrounding materials due to thermal mismatch, microstructure changes or process integration can lead to performance reduction, reliability-limiting degradation and failure of microelectronic products. Understanding stress-related phenomena in new materials used for 3D integration and packaging, particularly using through silicon vias and microbumps, is critical for future microelectronic products. Management of mechanical stress is one of the key enablers for the successful implementation of 3D-integrated circuits using through silicon vias (TSVs). The potential stress-related impact of the 3D integration process on the device characteristics must be understood and shared, and designers need a solution for managing stress. The Proceedings summarize new research results and advances in basic understanding of stress-induced phenomena in 3D IC integration. Modelling and simulation capabilities as well as materials characterization are demonstrated to evaluate the effect of stress on product performance.