We have fabricated high-efficiency thin-film CuIn1-xGaxSe2 (CIGS)-based photovoltaic devices from solution-based electroplated (EP) and auto-plated (AP) precursors. As-deposited precursors are Cu-rich CIGS. Compositions were adjusted to CuIn1-xGaxSe2 with additional In and Ga by physical vapor deposition (PVD) to the EP and AP precursor films. Auger analysis and grazing incident X-ray diffraction(GIXRD) were performed on devices prepared from EP and AP precursor films. We have also analyzed and compared EP, AP, and an PVD CIGS device by deep-level transient spectroscopy (DLTS).

The authors have fabricated high-efficiency thin-film CuIn{sub 1-x}GaxSe2 (CIGS)-based photovoltaic devices from solution-based electroplated (EP) and auto-plated (AP) precursors. As-deposited precursors are Cu-rich CIGS. Compositions were adjusted to CuIn{sub 1-x}GaxSe2 with additional In and Ga by physical vapor deposition (PVD) to the EP and AP precursor films. Auger analysis and grazing incident X-ray diffraction (GIXRD) were performed on devices prepared from EP and AP precursor films. The authors have also analyzed and compared EP, AP, and an PVD CIGS device by deep-level transient spectroscopy (DLTS).

The authors have fabricated high-efficiency thin-film CuIn{sub 1-x}Ga(subscript x)Se2 (CIGS)-based photovoltaic devices from solution-based electroplated (EP) and auto-plated (AP) precursors. As-deposited precursors are Cu-rich CIGS. Compositions were adjusted to CuIn{sub 1-x}Ga(subscript x)Se2 with additional In and Ga by physical vapor deposition (PVD) to the EP and AP precursor films. Auger analysis and grazing incident X-ray diffraction (GIXRD) were performed on devices prepared from EP and AP precursor films. The authors have also analyzed and compared EP, AP, and an PVD CIGS device by deep-level transient spectroscopy (DLTS).