This book studies the armed resistance of the Turkana people of north western Kenya to British colonial administration in the early twentieth century. From their first encounters with the colonial vanguard in the 1890s to the final surrender of the Great Diviner, Lloolel Kokoi, in 1926, the Turkana resisted imperial conquest. Even after the imposition of colonial rule, they continued to oppose the administration through a variety of strategies. The first full study of the pastoral Turkana people, this book explores their responses to European colonialism and examines the nature of their resistance, making extensive use of oral sources, as well as archival and published material. His analysis takes full account of the military history of the period, and addresses the fundamental question of why some African societies met the European advance with armed resistance while others did not.

The wave equation, a classical partial differential equation, has been studied and applied since the eighteenth century. Solving it in the presence of an obstacle, the scatterer, can be achieved using a variety of techniques and has a multitude of applications. This book explains clearly the fundamental ideas of time-domain scattering, including in-depth discussions of separation of variables and integral equations. The author covers both theoretical and computational aspects, and describes applications coming from acoustics (sound waves), elastodynamics (waves in solids), electromagnetics (Maxwell's equations) and hydrodynamics (water waves). The detailed bibliography of papers and books from the last 100 years cement the position of this work as an essential reference on the topic for applied mathematicians, physicists and engineers.

Addressing graduate students and researchers, this book gives a very detailed theoretical and computational description of multiple scattering in solid matter. Particular emphasis is placed on solids with reduced dimensions, on full potential approaches and on relativistic treatments. For the first time approaches such as the screened Korringa-Kohn-Rostoker method are reviewed, considering all formal steps such as single-site scattering, structure constants and screening transformations, and also the numerical point of view. Furthermore, a very general approach is presented for solving the Poisson equation, needed within density functional theory in order to achieve self-consistency. Special chapters are devoted to the Coherent Potential Approximation and to the Embedded Cluster Method, used, for example, for describing nanostructured matter in real space. In a final chapter, physical properties related to the (single-particle) Green's function, such as magnetic anisotropies, interlayer exchange coupling, electric and magneto-optical transport and spin-waves, serve to illustrate the usefulness of the methods described.

The purpose of this book is to provide the reader with a self-contained treatment of fundamen tal solid state and semiconductor device physics. The material presented in the text is based upon the lecture notes of a one-year graduate course sequence taught by this author for many years in the ·Department of Electrical Engineering of the University of Florida. It is intended as an introductory textbook for graduate students in electrical engineering. However, many students from other disciplines and backgrounds such as chemical engineering, materials science, and physics have also taken this course sequence, and will be interested in the material presented herein. This book may also serve as a general reference for device engineers in the semiconductor industry. The present volume covers a wide variety of topics on basic solid state physics and physical principles of various semiconductor devices. The main subjects covered include crystal structures, lattice dynamics, semiconductor statistics, energy band theory, excess carrier phenomena and recombination mechanisms, carrier transport and scattering mechanisms, optical properties, photoelectric effects, metal-semiconductor devices, the p--n junction diode, bipolar junction transistor, MOS devices, photonic devices, quantum effect devices, and high speed III-V semiconductor devices. The text presents a unified and balanced treatment of the physics of semiconductor materials and devices. It is intended to provide physicists and mat erials scientists with more device backgrounds, and device engineers with a broader knowledge of fundamental solid state physics.

Electron energy loss spectroscopy (ELS) is a vast subject with a long and honorable history. The problem of stopping power for high energy particles interested the earliest pioneers of quantum mechanics such as Bohr and Bethe, who laid the theoretical foun dations of the subject. The experimental origins might perhaps be traced to the original Franck-Hertz experiment. The modern field includes topics as diverse as low energy reflection electron energy loss studies of surface vibrational modes, the spectroscopy of gases and the modern theory of plasmon excitation in crystals. For the study of ELS in electron microscopy, several historically distinct areas of physics are relevant, including the theory of the Debye Waller factor for virtual inelastic scattering, the use of complex optical potentials, lattice dynamics for crystalline specimens and the theory of atomic ionisation for isolated atoms. However the field of electron energy loss spectroscopy contains few useful texts which can be recommended for students. With the recent appearance of Raether's and Egerton's hooks (see text for references), we have for the first time both a comprehensive review text-due to Raether-and a lucid introductory text which emphasizes experimental aspects-due to Egerton. Raether's text tends to emphasize the recent work on surface plasmons, while the strength of Egerton's book is its treatment of inner shell excitations for microanalysis, based on the use of atomic wavefunctions for crystal electrons.

This graduate-level text, intended for any student of physics who requires a thorough grounding in the quantum theory of nonrelativistic scattering, emphasizes the time-dependent approach. 1983 edition.

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