This contract involves investigating the efficacy of atomic layer and molecular beam epitaxy techniques for the growth of GaN (a wide bandgap semiconductor). During this reporting period, work was extended to growth of materials in the Al-Ga-In-N solid solution series as well as pure AlN and InN, and heterostructures of these materials. In addition, work was begun on the growth of cubic boron nitride. The first reported heterostructures of cubic GaN/ AlN were produced. Work also continued on characterization of the cubic GaN already produced. Much improved material and higher growth rates were observed with the installation of a NCSU-designed, constructed, and commissioned electron cyclotron resonance plasma source. Epitaxial growth, Crystallography.

This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.