Not only conventional computer architectures, such as the von-Neumann architecture with its inevitable von-Neumann bottleneck, but likewise the emerging field of edge computing require to substantially decrease the spatial separation of logic and memory units to overcome power and latency shortages. The integration of logic operations into memory units (Logic-in-Memory), as well as memory elements into logic circuits (Nonvolatile Logic), promises to fulfill this request by combining high-speed with low-power operation. Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide prove to be auspicious candidates for the memory elements in applications of that kind, as those nonvolatile memory elements are CMOS-compatible and likewise scalable. This work presents implementations that merge logic and memory by exploiting the natural capability of the FeFET to combine logic functionality (transistor) and memory ability (nonvolatility).

The probe-based seek-and-scan data storage system is an ideal candidate for future ultrahigh-density (> 1 Tbit/inch2) nonvolatile memory devices. In such a system, an array of atomic force microscope (AFM) probes is used to write and read data on a nonvolatile medium. While various writing mechanisms have been proposed for probe-based storage, a great deal of attention has recently been devoted to the pulse writing on ferroelectric films due to the non-destructive nature of the write-erase mechanism. When a short electrical pulse is applied through a conductive probe on a ferroelectric film, the highly concentrated electric field can invert the polarization of a local film volume, resulting in a nonvolatile ferroelectric domain that is the basis of data recording. This mechanism allows for longer medium longevity, i.e., larger number of write-erase cycles that is comparable to hard disk drives, faster write and read times, smaller bit size and higher storage densities. However, no commercial product has reached the market yet. This is due to three fundamental issues that have remained a bottleneck for the development of this technology. These are ultrahigh density writing over large areas, stability of single-digit nanometer inverted domains and probe-tip mechanical wear. In this dissertation, we demonstrate a scheme which allows for the writing of a stable 3.6 Tbit/inch2 storage density over a 1 x 1 [Mu]m2 area, which is the highest density ever written on ferroelectric films over such a large area. Such a high density is enabled by the growth of atomically smooth single-crystal Pb(Zr1-xTix)O3 (PZT) ferroelectric films. We also demonstrate the application of a novel conductive AFM procedure, which allows for the mapping of dead spots in these films, thereby enabling the optimization of their growth conditions. Using novel dielectric-sheathed single-walled carbon nanotube (SWNT) probes, we then demonstrate that single-digit nanometer domains remain stable only if they are fully inverted through the entire PZT film thickness, which is dependent on a critical ratio of electrode size to the film thickness. This understanding enables the formation of stable domains as small as 4 nm in diameter, corresponding to 10 unit cells in size. Such domain size corresponds to potential 40 Tbit/inch2 data storage densities. Furthermore, we show that the built-in bias, which is mainly due to near-surface lead (Pb) vacancies in the PZT films, can be tuned and suppressed by repetitive hydrogen and oxygen plasma treatments, allowing for nanometer-size domain stability in both up and down polarizations. Such treatments compensate for charges induced by the Pb vacancies. Finally, we show that a platinum-iridium probe-tip retains its write-read resolution on such surfaces over 5 km of sliding at a 5 mm/s velocity. This tip-wear endurance is enabled by introducing a thin water layer at the tip-media interface -- thin enough to form a liquid crystal. By modulating the force at the tip-surface contact, this water crystal can act as a viscoelastic material, which reduces the stress level on atomic bonds taking part in the wear process. Furthermore, we show that the wear endurance distance can be increased by as much as two folds through the use of ultra-hard HfB2 metal coatings.

This thesis evaluates the viability of ferroelectric Si:HfO2 and its derived FeFET application for non-volatile data storage. At the beginning, the ferroelectric effect is explained briefly such that the applications that make use of it can be understood. Afterwards, the latest findings on ferroelectric HfO2 are reviewed and their potential impact on future applications is discussed. Experimental data is presented afterwards focusing on the ferroelectric material characteristics of Si:HfO2 that are most relevant for memory applications. Besides others, the stability of the ferroelectric switching effect could be demonstrated in a temperature range of almost 400 K. Moreover, nanosecond switching speed and endurance in the range of 1 million to 10 billion cycles could be proven. Retention and imprint characteristics have furthermore been analyzed and are shown to be stable for 1000 hours bake time at 125 oC. Derived from the ferroelectric effect in HfO2, a 28 nm FeFET memory cell is introduced as the central application of this thesis. Based on numerical simulations, the memory concept is explained and possible routes towards an optimized FeFET cell are discussed. Subsequently, the results from electrical characterization of FeFET multi-structures are presented and discussed. By using Si:HfO2 it was possible to realize the world's first 28 nm FeFET devices possessing i.a. 10k cycling endurance and an extrapolated 10 year data retention at room temperature. The next step towards a FeFET memory is represented by connecting several memory cells into matrix-type configurations. A cell concept study illustrates the different ways in which FeFET cells can be combined together to give high density memory arrays. For the proposed architectures, operational schemes are theoretically discussed and analyzed by both electrical characterization of FeFET multi-structures and numerical simulations. The thesis concludes with the electrical characterization of small FeFET memory arrays. First results show that a separation between memory states can be achieved by applying poling and incremental step pulse programming (ISPP) sequences. These results represent an important cornerstone for future studies on Si:HfO2 and its related applications.

Over the last three years a significant program of detector technology research and development for high luminosity, high energy hadron-hadron colliders has been underway in the United States, Japan and Europe. In as much as the first formal steps have been undertaken to initiate the experimental program at the Superconducting Super Collider (SSC), it is appropriate to assess in detail the status of this R&D effort.Results and Plans for Advanced Technology R&D for Particle Physics Detectors Appropriate for SSC Experiments are Presented. Specific Topics include: Calorimetry; Particle Tracking and Identification Techniques; Vertex-Detection; Magnets; Front-End Electronics; Data Acquisition Electronics; Techniques in Triggering; Data Transmission; Data Analysis and Simulation Software; Studies on Radiation Damage to Materials and Electronics.

This is the first comprehensive book on ferroelectric memories which contains chapters on device design, processing, testing, and device physics, as well as on breakdown, leakage currents, switching mechanisms, and fatigue. State-of-the-art device designs are included and illustrated among the books many figures. More than 500 up-to-date references and 76 problems make it useful as a research reference for physicists, engineers and students.