This book presents a comprehensive description of the most promising high density plasma sources operated at low and intermediate pressures which are used, or could be used, in plasma processing such as etching and deposition. The authors are the leading experts in the field who are original inventors and designers of plasma sources they describe in this book. This book gives a balanced treatment of both the theoretical aspects and practical applications. It should be of considerable interest to scientists and engineers working on plasma source designs and process developments.

This book describes the design, physics, and performance of high density plasma sources which have been extensively explored in low pressure plasma processing, such as plasma etching and planarization, plasma enhanced chemical vapor deposition of thin films, sputtered deposition of metals and dielectrics, epitaxial growth of silicon and GaAs, and many other applications. This is a comprehensive survey and a detailed description of most advanced high density plasma sources used in plasma processing. The book is a balanced presentation in that it gives both a theoretical treatment and practical applications. It should be of considerable interest to scientists and engineers working on plasma source design, and process development.

This book describes the design, physics, and performance of high density plasma sources which have been extensively explored in low pressure plasma processing, such as plasma etching and planarization, plasma enhanced chemical vapor deposition of thin films, sputtered deposition of metals and dielectrics, epitaxial growth of silicon and GaAs, and many other applications. This is a comprehensive survey and a detailed description of most advanced high density plasma sources used in plasma processing. The book is a balanced presentation in that it gives both a theoretical treatment and practical applications. It should be of considerable interest to scientists and engineers working on plasma source design, and process development.

During this program Science Research Laboratory (SRL) and the Plasma Processing Group in the Department of Chemical Engineering at MIT are developing a large-area, directed plasma/atomic beam source for diamond deposition. The plasma source is based on an inductively-driven plasma accelerator that efficiently produces a high density (l0(exp 14)-10(exp 17)/cu cm) plasma over an area of 0.1-1 square meters. The goal of this effort is to experimentally demonstrate the technical feasibility of employing the plasma source for high-throughput diamond deposition, through characterization of plasma parameters and preliminary diamond deposition experiments. A reactor design study will also be completed during Phase I, leading to an engineering design of a large-area plasma reactor for Phase II implementation. The period of performance is from 30 September 1994 to 29 March 1995. jg p.4.