Denise Reichel studies the delicate subject of temperature measurement during lamp-based annealing of semiconductors, in particular during flash lamp annealing. The approach of background-correction using amplitude-modulated light to obtain the sample reflectivity is reinvented from rapid thermal annealing to apply to millisecond annealing. The author presents a new method independent of the lamp operation to obtain this amplitude modulation and derives a formula to describe the process. Further, she investigates the variables of the formula in depth to validate the method’s suitability for background-corrected temperature measurement. The experimental results finally proof its power for elevated temperatures.

This book provides a comprehensive survey of the technology of flash lamp annealing (FLA) for thermal processing of semiconductors. It gives a detailed introduction to the FLA technology and its physical background. Advantages, drawbacks and process issues are addressed in detail and allow the reader to properly plan and perform their own thermal processing. Moreover, this books gives a broad overview of the applications of flash lamp annealing, including a comprehensive literature survey. Several case studies of simulated temperature profiles in real material systems give the reader the necessary insight into the underlying physics and simulations. This book is a valuable reference work for both novice and advanced users.

The thermal processing of materials ranges from few fem to seconds by Swift Heavy Ion Implantation to about one second using advanced Rapid Thermal Annealing. This book offers after an historical excursus selected contributions on fundamental and applied aspects of thermal processing of classical elemental semiconductors and other advanced materials including nanostructures with novel optoelectronic, magnetic, and superconducting properties. Special emphasis is given on the diffusion and segregation of impurity atoms during thermal treatment. A broad range of examples describes the solid phase and/or liquid phase processing of elemental and compound semiconductors, dielectric composites and organic materials.

This issue describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.

This book describes the practice of radiation thermometry, both at a primary level and for a variety of applications, such as in the materials processing industries and remote sensing. This book is written for those who will a) apply radiation thermometry in industrial practice b) use radiation thermometers for scientific research, c) the radiation thermometry specialist in a national measurement institute d) developers of radiation thermometers who are working to innovate products for instrument manufacturers and e) developers non-contact thermometry methods to address challenging thermometry problems. The author(s) of each chapter were chosen from a group of international scientists who are experts in the field and specialist(s) on the subject matter covered in the chapter. A large number of references are included at the end of each chapter as a resource for those seeking a deeper or more detailed understanding. This book is more than a practice guide. Readers will gain in-depth knowledge in: (1) the proper selection of the type of thermometer; (2) the best practice in using the radiation thermometers; (3) awareness of the error sources and subsequent appropriate procedure to reduce the overall uncertainty; and (4) understanding of the calibration chain and its current limitations. - Coverage of all fundamental aspects of the radiometric measurements - Coverage of practical applications with details on the instrumentation, calibration, and error sources - Authors are from the national labs internationally leading in R&D in temperature measurements - Comprehensive coverage with large number of references

Diagnostic characterization techniques for semiconductor materials, devices and device processing are addressed at this symposium. It will cover new techniques as well as advances in routine analytical technology applied to semiconductor process development and manufacture. The hardcover edition includes a CD-ROM of ECS Transactions, Volume 10, Issue 1, Analytical Techniques for Semiconductor Materials and Process Characterization 5 (ALTECH 2007). The PDF edition also includes the ALTECH 2007 papers.