In the past 30 years, magnetic research has been dominated by the question of how surfaces and interfaces influence the magnetic and transport properties of nanostructures, thin films and multilayers. The research has been particularly important in the magnetic recording industry where the giant magnetoresistance effect led to a new generation of storage devices including hand-held memories such as those found in the ipod. More recently, transfer of spin angular momentum across interfaces has opened a new field for high frequency applications.This book gives a comprehensive view of research at the forefront of these fields. The frontier is expanding through dynamic exchange between theory and experiment. Contributions have been chosen to reflect this, giving the reader a unified overview of the topic. Addresses both theory and experiment that are vital for gaining an essential understanding of topics at the interface between magnetism and materials science Chapters written by experts provide great insights into complex material Discusses fundamental background material and state-of-the-art applications, serving as an indispensable guide for students and professionals at all levels of expertise Stresses interdisciplinary aspects of the field, including physics, chemistry, nanocharacterization, and materials science Combines basic materials with applications, thus widening the scope of the book and its readership

The stochastic field-driven depinning of a domain wall pinned at a notch in a magnetic nanowire is directly observed using magnetic X-ray microscopy with high lateral resolution down to 15 nm. The depinning-field distribution in Ni0Fe20 nanowires considerably depends on the wire width and the notch depth. The difference in the multiplicity of domain-wall types generated in the vicinity of a notch is responsible for the observed dependence of the stochastic nature of the domain wall depinning field on the wire width and the notch depth. Thus the random nature of the domain wall depinning process is controllable by an appropriate design of the nanowire.

We study current-induced domain wall dynamics in a thin ferromagnetic nanowire. We derive the effective equations of domain wall motion, which depend on the wire geometry and material parameters. We describe the procedure to determine these parameters by all-electric measurements of the time-dependent voltage induced by the domain wall motion. We provide an analytical expression for the time variation of this voltage. Furthermore, we show that the measurement of the proposed effects is within reach with current experimental techniques. We also show that a certain resonant time-dependent current moving a domain wall can significantly reduce the Joule heating in the wire, and thus it can lead to a novel proposal for the most energy efficient memory devices. We discuss how Gilbert damping, non-adiabatic spin transfer torque, and the presence of Dzyaloshinskii-Moriya interaction can effect this power optimization. Furthermore, we propose a new nanodot magnetic device. We derive a specific time-dependent current that is needed to switch the magnetization of the nanodot the most efficiently.

Spintronics Handbook, Second Edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures. It focuses on seminal pioneering work, together with the latest in cutting-edge advances, notably extended discussion of two-dimensional materials beyond graphene, topological insulators, skyrmions, and molecular spintronics. The main sections cover physical phenomena, spin-dependent tunneling, control of spin and magnetism in semiconductors, and spin-based applications.