Temperature- and Field-dependence of the Generation of Interface States in the Si-SiO2 System
Title | Temperature- and Field-dependence of the Generation of Interface States in the Si-SiO2 System PDF eBook |
Author | Kenneth Jzyh-kang Wu |
Publisher | |
Pages | 258 |
Release | 1983 |
Genre | |
ISBN |
Energy and Electric Field Dependence of Si-SiO2 Interface State Parameters by Optically-activated Admittance Measurements
Title | Energy and Electric Field Dependence of Si-SiO2 Interface State Parameters by Optically-activated Admittance Measurements PDF eBook |
Author | Tommy Chut-Yu Poon |
Publisher | |
Pages | 304 |
Release | 1980 |
Genre | Semiconductors |
ISBN |
The MOS System
Title | The MOS System PDF eBook |
Author | Olof Engström |
Publisher | Cambridge University Press |
Pages | 369 |
Release | 2014-09-25 |
Genre | Science |
ISBN | 1107005930 |
A detailed, up-to-date guide to modern MOS structures, describing key tools, cutting-edge models, novel phenomena and challenges for future development. Abstract concepts are supported by practical examples and presented alongside recent theoretical and experimental results. An ideal companion for researchers, graduate students and industrial development engineers.
The Si-SiO2 System
Title | The Si-SiO2 System PDF eBook |
Author | P. Balk |
Publisher | Elsevier Publishing Company |
Pages | 376 |
Release | 1988 |
Genre | Science |
ISBN |
The Si-SiO 2 system has been the subject of concentrated research for over 25 years, particularly because of its key role in silicon integrated circuits. However, only a few comprehensive treatises on this field have been published in recent years. This book focuses on the materials science and technology aspects of the system. Its aim is to give a comprehensive overview of the topic, including an extensive list of references giving easy access to the literature. After an introductory chapter which reviews the Si-SiO 2 system from the perspective of other semiconductor-insulator combinations of technical interest, the technology of oxide preparation is discussed. Fundamental questions regarding the structure and chemistry of the interfacial region are then addressed. Two chapters are concerned with system properties: one deals with the physico-chemical, electrical and device-related characteristics and the way these are affected by the technology of oxide preparation; a second chapter focuses on point defects and charge trapping. The book concludes with a broad review of the techniques available for electrical characterization of the system, including the physical background.
Study of the Generation of Interface States in the Si-SiO2 System After High-field Stress and After X-irradiation
Title | Study of the Generation of Interface States in the Si-SiO2 System After High-field Stress and After X-irradiation PDF eBook |
Author | Genda Hu |
Publisher | |
Pages | 216 |
Release | 1980 |
Genre | |
ISBN |
Oxide Reliability: A Summary Of Silicon Oxide Wearout, Breakdown, And Reliability
Title | Oxide Reliability: A Summary Of Silicon Oxide Wearout, Breakdown, And Reliability PDF eBook |
Author | David J Dumin |
Publisher | World Scientific |
Pages | 281 |
Release | 2002-01-18 |
Genre | Technology & Engineering |
ISBN | 981448945X |
This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field.
The Physics of SiO2 and Its Interfaces
Title | The Physics of SiO2 and Its Interfaces PDF eBook |
Author | Sokrates T. Pantelides |
Publisher | Elsevier |
Pages | 501 |
Release | 2013-09-17 |
Genre | Science |
ISBN | 148313900X |
The Physics of SiO2 and Its Interfaces covers the proceedings of the International Topical Conference on the Physics of SiO2 and its Interfaces, held at the IBM Thomas J. Watson Research Center, Yorktown Heights, New York on March 22-24, 1978. The book focuses on the properties, reactions, transformations, and structures of silicon dioxide (SiO2). The selection first discusses the electronic properties of vitreous SiO2 and small polaron formation and motion of holes in a-SiO2. Discussions focus on mobility edges and polarons, deep states in the gap, and excitons. The text also ponders on field-dependent hole and exciton transport in SiO2 and electron emission from SiO2 into vacuum. The publication takes a look at the electronic structures of crystalline and amorphous SiO2; band structures and electronic properties of SiO2; and optical absorption spectrum of SiO2. The text also tackles chemical bond and related properties of SiO2; topological effects on the band structure of silica; and properties of localized SiO2 clusters in layers of disordered silicon on silver. The selection is a good reference for physicists and readers interested in the physics of silicon dioxide.