Carbide, Nitride and Boride Materials Synthesis and Processing is a major reference text addressing methods for the synthesis of non-oxides. Each chapter has been written by an expert practising in the subject area, affiliated with industry, academia or government research, thus providing a broad perspective of information for the reader. The subject matter ranges from materials properties and applications to methods of synthesis including pre- and post-synthesis processing. Although most of the text is concerned with the synthesis of powders, chapters are included for other materials such as whiskers, platelets, fibres and coatings. Carbide, Nitride and Boride Materials Synthesis and Processing is a comprehensive overview of the subject and is suitable for practitioners in the industry as well as those looking for an introduction to the field. It will be of interest to chemical, mechanical and ceramic engineers, materials scientists and chemists in both university and industrial environments working on or with refractory carbides, nitrides and borides.

Turn to this new second edition for an understanding of the latest advances in the chemical vapor deposition (CVD) process. CVD technology has recently grown at a rapid rate, and the number and scope of its applications and their impact on the market have increased considerably. The market is now estimated to be at least double that of a mere seven years ago when the first edition of this book was published. The second edition is an update with a considerably expanded and revised scope. Plasma CVD and metallo-organic CVD are two major factors in this rapid growth. Readers will find the latest data on both processes in this volume. Likewise, the book explains the growing importance of CVD in production of semiconductor and related applications.

Properties of thin films depend strongly upon the deposition technique and conditions chosen. In order to achieve the desired film, optimum deposition conditions have to be found by carrying out experiments in a trial-and error fashion with varying parameters. The data obtained on one growth apparatus are often not transferable to another. This is especially true for film deposition processes using a cold plasma because of our poor under standing of the mechanisms. Relatively precise studies have been carried out on the role that physical effects play in film formation such as sputter deposition. However, there are many open questions regarding processes that involve chemical reactions, for example, reactive sputter deposition or plasma enhanced chemical vapor deposition. Much further research is re quired in order to understand the fundamental deposition processes. A sys tematic collection of basic data, some of which may be readily available in other branches of science, for example, reaction cross sections for gases with energetic electrons, is also required. The need for pfasma deposition techniques is felt strongly in industrial applications because these techniques are superior to traditional thin-film deposition techniques in many ways. In fact, plasma deposition techniques have developed rapidly in the semiconductor and electronics industries. Fields of possible application are still expanding. A reliable plasma reactor with an adequate in situ system for monitoring the deposition conditions and film properties must be developed to improve reproducibility and pro ductivity at the industrial level.