This book gives a systematic overview on the scientific fundamentals of crystal growth from the classical phenomenological description to the recent theoretical contributions of statistical physics such as studies on surface roughening and on the pattern formation in the diffusion-limited growth. The book emphasizes physical concepts as well as mathematical details, and is intended to serve as lecture notes for postgraduate courses. Contents: Introduction; Ideal Growth Laws; Statistical Mechanics of Surface; Kinetics-Limited Growth; Diffusion-Limited Growth: Pattern Formation; Appendices; References; Index. Readership: Condensed matter physicists.

This text discusses the physical principles of how and why crystals grow. It introduces the fundamental properties of crystal surfaces at equilibrium, and describes simple models and basic concepts of crystal growth including diffusion, thermal smoothing of a surface, and applications to semiconductors. It also covers more complex topics such as kinetic roughness, growth instabilities, and elastic effects, as well as the crucial contributions of crystal growth in electronics during this century. The book focuses on growth using molecular beam epitaxy. Throughout, the emphasis is on the role played by modern statistical physics. Informative appendices, interesting exercises and an extensive bibliography reinforce the text.

Originally published in 1991, this book, based on the 1989 Beg-Rohu summer school, contains six sets of pedagogical lectures by internationally respected researchers on the statistical physics of crystal growth. Providing a course in which the phenomena of shape and growth are viewed from a fresh vantage point, the lectures cover a variety of developments in the field and reflect on problems that have received inadequate attention. Statistical physicists, condensed matter physicists, metallurgists, and applied mathematicians will find this a stimulating and valuable book on an important topic.

The Growth of Crystals series was begun in 1957 by A. V. Shubnikov and . N. N. SheftaP with the publication of the first volume. which contained the proceedings of the First All-Union Conference on Crystal Growth. The initiative and considerable efforts of the principal editor of the entire series. N. N. Sheftal', and his assistants led over the next 15 years to the publica tion of ten volumes which have assumed a leading position among the numerous books on crys tal growth. It has become traditional in this series to adopt a broad approach to crystal growth problems, and this approach is continued in Volumes 11 and 12, which are composed mainly of papers presented at the Fourth All-Union Conference on Crystal Growth in Tsakhkadzor. September 17-22, 1972. These papers, presented by both Soviet and foreign workers, deal with crystal growth processes. growth methods. and crystal perfection. Many of the papers reflect the tendency for our knowledge of crystallization processes to become increasingly more fundamental. with emphaSis on quantitative treatments. There are some extremely difficult problems in this approach. especially when the requirements of practical uses are envisaged. and many of these are discussed in various ways in these two volumes. These topics include detailed theoretical and experimental analysis of cooperative phenomena in crystallization. with emphasis not only on statistical thermodynamics but also statistical kinetics. This approach involves research on the structure and properties of phase boundaries. including the composition and structure of surface layers in liquids.

This is the first-ever textbook on the fundamentals of nucleation, crystal growth and epitaxy. It has been written from a unified point of view and is thus a non-eclectic presentation of this interdisciplinary topic in materials science. The reader is required to possess some basic knowledge of mathematics and physics. All formulae and equations are accompanied by examples that are of technological importance. The book presents not only the fundamentals but also the state of the art in the subject. The second revised edition includes two separate chapters dealing with the effect of the Enrich-Schwoebel barrier for down-step diffusion, as well as the effect of surface active species, on the morphology of the growing surfaces. In addition, many other chapters are updated accordingly. Thus, it serves as a valuable reference book for both graduate students and researchers in materials science.

While many scientists are familiar with fractals, fewer are familiar with scale-invariance and universality which underlie the ubiquity of their shapes. These properties may emerge from the collective behaviour of simple fundamental constituents, and are studied using statistical field theories. Initial chapters connect the particulate perspective developed in the companion volume, to the coarse grained statistical fields studied here. Based on lectures taught by Professor Kardar at MIT, this textbook demonstrates how such theories are formulated and studied. Perturbation theory, exact solutions, renormalization groups, and other tools are employed to demonstrate the emergence of scale invariance and universality, and the non-equilibrium dynamics of interfaces and directed paths in random media are discussed. Ideal for advanced graduate courses in statistical physics, it contains an integrated set of problems, with solutions to selected problems at the end of the book and a complete set available to lecturers at www.cambridge.org/9780521873413.

Patterns are becoming the focal point of many areas of scientific endeavour in recent years owing to the progress of computer science, laboratory experiments and observations, and analytical tools. This book brings together articles by the leading experts in this field. The following topics are discussed in this volume: current status of pattern research with emphasis on real phenomena and new theoretical concepts; interdisciplinary subjects involving Statistical Physics, Condensed Matter Physics, Fluid Mechanics, Nonequilibrium and Nonlinear Phenomena.