This issue contains the proceedings of both invited and contributed talks at the 47th State-Of-The-Art Programs on Compound Semiconductors (SOTAPOCS) symposium, and of the 8th Symposium on Wide Bandgap Semiconductors and Devices. The topics in this issue include some of the latest progress in compound and wide bandgap semiconductor development in fabrication processes, materials, characterization, devices, and reliability.

This volume contains papers from two symposia: State of the Art Program on Compound Semiconductors 45 and Wide Bandgap Semiconductor Materials and Devices VII.

The papers included in this issue of ECS Transactions were originally presented in the joint symposium ¿State-of-the-Art Program on Compound Semiconductors 51 (SOTAPOCS 51) and Wide-Bandgap Semiconductor Materials and Devices 10¿, held during the 216th meeting of The Electrochemical Society, in Vienna, Austria from October 4 to 9, 2009.

This issue of ECS Transactions contain the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and other related topics, as well as the most recent developments in processes at the semiconductor/solution interface including etching, oxidation, passivation, film growth, electrochemical and photoelectrochemical processes, electroluminescence, photoluminescence, and other related topics.

This issue of ECS Transactions focuses on issues pertinent to materials growth, characterization, processing, development, application of compound semiconductor materials and devices, including nitrides and wide-bandgap semiconductors.

This issue of ECS Transactions focuses on issues pertinent to development of wide-bandgap semiconductor materials and device applications: inorganic wide-bandgap semiconductor materials, including III-nitrides, II-oxides, SiC, diamond, II-VI, and emerging materials.