This book focusses on the spacer engineering aspects of novel MOS-based device–circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.

This book focusses on the spacer engineering aspects of novel MOS-based device–circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.

This book presents the latest trends and approaches in artificial intelligence research and its application to intelligent systems. It discusses hybridization of algorithms, new trends in neural networks, optimisation algorithms and real-life issues related to the application of artificial methods. The book constitutes the second volume of the refereed proceedings of the Artificial Intelligence and Algorithms in Intelligent Systems of the 7th Computer Science On-line Conference 2018 (CSOC 2018), held online in April 2018.

Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.

This book constitutes selected papers from the Second International Conference on Microelectronic Devices, Circuits and Systems, ICMDCS 2021, held in Vellore, India, in February 2021. The 32 full papers and 6 short papers presented were thoroughly reviewed and selected from 103 submissions. They are organized in the topical sections on ​digital design for signal, image and video processing; VLSI testing and verification; emerging technologies and IoT; nano-scale modelling and process technology device; analog and mixed signal design; communication technologies and circuits; technology and modelling for micro electronic devices; electronics for green technology.

Micro- and Nanoelectronics: Emerging Device Challenges and Solutions presents a comprehensive overview of the current state of the art of micro- and nanoelectronics, covering the field from fundamental science and material properties to novel ways of making nanodevices. Containing contributions from experts in both industry and academia, this cutting-edge text: Discusses emerging silicon devices for CMOS technologies, fully depleted device architectures, characteristics, and scaling Explains the specifics of silicon compound devices (SiGe, SiC) and their unique properties Explores various options for post-CMOS nanoelectronics, such as spintronic devices and nanoionic switches Describes the latest developments in carbon nanotubes, iii-v devices structures, and more Micro- and Nanoelectronics: Emerging Device Challenges and Solutions provides an excellent representation of a complex engineering field, examining emerging materials and device architecture alternatives with the potential to shape the future of nanotechnology.