We report on a solid-source method to introduce dopants or controlled impurities directly into the melt zone during float-zone growth of single- or multicrystalline ingots. Unlike the Czochralski (CZ) growth situation, float-zoning allows control over the levels of some impurities (O, C) that cannot be avoided in CZ growth or ingot casting. But aside from impurity studies, the method turns out to be very practical for routine p-type doping in semicontinuous growth processes such as float-zoning, electromagnetic casting, or melt-replenished ribbon growth. Equations governing dopant incorporation, dopant withdrawal, and N co-doping are presented and experimentally verified. Doping uniformity and doping initiation and withdrawal time constants are also reported. The method uses nontoxic source materials and is flexible with quick turnaround times for changing doping levels. Boron p-type doping with nitrogen co-doping is particularly attractive for silicon lattice strengthening against process-induced dislocation motion and also allows greater freedom from incorporation of Si self-interstitial cluster or A and B swirl-type defects and"D"--Type microdefects than nitrogen-free p-type material.

This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.

The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters. The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.

The purpose of this research has been to develop an optimum process for the borondoping of implants and polysilicon gates of metal-oxide-semiconductor (MOS) devices. An experimental design was constructed to determine the effects of diffusiontemperature, time, and ambient on characteristics of the doping process. A temperaturerange of 800 to 1000 degrees Celsius was studied with a diffusion time between 10 and 60 minutes. Two diffusion ambients were used for doping processes, a pure nitrogenambient and a nitrogen-oxygen gaseous mixture. Device wafers were fabricated, and thetesting of MOS capacitors and van der Pauw test structures was performed to determinethe effect of diffusion conditions on flatband voltage and poly gate doping. Materialscharacterization techniques were used on monitor wafers for each diffusion process todetermine the wafer structure formed for each process and evaluate the effectiveness ofthe deglaze etch. The processes that resulted in the best device characteristics withoutsuffering from significant poly depletion effects and flatband voltage shifts were wafersdoped at 800 degrees Celsius in a pure nitrogen atmosphere for 20 minutes and 45 minutes. The presence of oxygen in the atmosphere caused the depletion of boron fromthe Si wafer surface. The formation of the Si-B phase only occurred on devices processedat 1000 degrees Celsius. The deglaze process used in this experiment did not fully remove this layer, and thus all devices doped at this temperature were seriously degraded.

The 4th edition of this highly successful textbook features copious material for a complete upper-level undergraduate or graduate course, guiding readers to the point where they can choose a specialized topic and begin supervised research. The textbook provides an integrated approach beginning from the essential principles of solid-state and semiconductor physics to their use in various classic and modern semiconductor devices for applications in electronics and photonics. The text highlights many practical aspects of semiconductors: alloys, strain, heterostructures, nanostructures, amorphous semiconductors, and noise, which are essential aspects of modern semiconductor research but often omitted in other textbooks. This textbook also covers advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, and transparent conductive oxides. The 4th edition includes many updates and chapters on 2D materials and aspects of topology. The text derives explicit formulas for many results to facilitate a better understanding of the topics. Having evolved from a highly regarded two-semester course on the topic, The Physics of Semiconductors requires little or no prior knowledge of solid-state physics. More than 2100 references guide the reader to historic and current literature including original papers, review articles and topical books, providing a go-to point of reference for experienced researchers as well.

Abstract: In this paper, we present new insight in the degradation and subsequent recovery of charge carrier lifetime upon light soaking at 75 °C observed in float-zone silicon wafers. Variations of doping type, dielectric passivation schemes and thermal treatments after layer deposition were performed. The degradation was only observed for p-type float-zone silicon wafers passivated with passivation schemes involving silicon nitride layers. An influence of thermal treatments after deposition was found. N-type wafers did not degrade independent of their passivation scheme. Room temperature re-passivation experiments showed the degradation to affect the wafer bulk, and photoluminescence studies demonstrated fine lateral striations of effective lifetime. We conclude that the degradation is caused by bulk defects that might be related to hydrogen complexes