This title introduces state-of-the-art design principles for SOI circuit design, and is primarily concerned with circuit-related issues. It considers SOI material in terms of implementation that is promising or has been used elsewhere in circuit development, with historical perspective where appropriate.

This book first introduces SOI device physics and its fundamental idiosyncrasies. It then walks the reader through realizations of these mechanisms, which are observed in common high-speed microprocessor designs. The book also offers rules of thumb and comparisons to conventional bulk CMOS to guide implementation and describes a number of unique circuit topologies that SOI supports.

The scaling of semiconductor devices from sub-micron to nanometer dimensions is driving the need for understanding the design of electrostatic discharge (ESD) circuits, and the response of these integrated circuits (IC) to ESD phenomena. ESD Circuits and Devices provides a clear insight into the layout and design of circuitry for protection against electrical overstress (EOS) and ESD. With an emphasis on examples, this text: explains ESD buffering, ballasting, current distribution, design segmentation, feedback, coupling, and de-coupling ESD design methods; outlines the fundamental analytical models and experimental results for the ESD design of MOSFETs and diode semiconductor device elements, with a focus on CMOS, silicon on insulator (SOI), and Silicon Germanium (SiGe) technology; focuses on the ESD design, optimization, integration and synthesis of these elements and concepts into ESD networks, as well as applying within the off-chip driver networks, and on-chip receivers; and highlights state-of-the-art ESD input circuits, as well as ESD power clamps networks. Continuing the author’s series of books on ESD, this book will be an invaluable reference for the professional semiconductor chip and system ESD engineer. Semiconductor device and process development, quality, reliability and failure analysis engineers will also find it an essential tool. In addition, both senior undergraduate and graduate students in microelectronics and IC design will find its numerous examples useful.

A practical and comprehensive reference that explores Electrostatic Discharge (ESD) in semiconductor components and electronic systems The ESD Handbook offers a comprehensive reference that explores topics relevant to ESD design in semiconductor components and explores ESD in various systems. Electrostatic discharge is a common problem in the semiconductor environment and this reference fills a gap in the literature by discussing ESD protection. Written by a noted expert on the topic, the text offers a topic-by-topic reference that includes illustrative figures, discussions, and drawings. The handbook covers a wide-range of topics including ESD in manufacturing (garments, wrist straps, and shoes); ESD Testing; ESD device physics; ESD semiconductor process effects; ESD failure mechanisms; ESD circuits in different technologies (CMOS, Bipolar, etc.); ESD circuit types (Pin, Power, Pin-to-Pin, etc.); and much more. In addition, the text includes a glossary, index, tables, illustrations, and a variety of case studies. Contains a well-organized reference that provides a quick review on a range of ESD topics Fills the gap in the current literature by providing information from purely scientific and physical aspects to practical applications Offers information in clear and accessible terms Written by the accomplished author of the popular ESD book series Written for technicians, operators, engineers, circuit designers, and failure analysis engineers, The ESD Handbook contains an accessible reference to ESD design and ESD systems.

This book first introduces SOI device physics and its fundamental idiosyncrasies. It then walks the reader through realizations of these mechanisms, which are observed in common high-speed microprocessor designs. The book also offers rules of thumb and comparisons to conventional bulk CMOS to guide implementation and describes a number of unique circuit topologies that SOI supports.

The 11 th IFIP International Conference on Very Large Scale Integration, in Montpellier, France, December 3-5,2001, was a great success. The main focus was about IP Cores, Circuits and System Designs & Applications as well as SOC Design Methods and CAD. This book contains the best papers (39 among 70) that have been presented during the conference. Those papers deal with all aspects of importance for the design of the current and future integrated systems. System on Chip (SOC) design is today a big challenge for designers, as a SOC may contain very different blocks, such as microcontrollers, DSPs, memories including embedded DRAM, analog, FPGA, RF front-ends for wireless communications and integrated sensors. The complete design of such chips, in very deep submicron technologies down to 0.13 mm, with several hundreds of millions of transistors, supplied at less than 1 Volt, is a very challenging task if design, verification, debug and industrial test are considered. The microelectronic revolution is fascinating; 55 years ago, in late 1947, the transistor was invented, and everybody knows that it was by William Shockley, John Bardeen and Walter H. Brattein, Bell Telephone Laboratories, which received the Nobel Prize in Physics in 1956. Probably, everybody thinks that it was recognized immediately as a major invention.

Circuits for Emerging Technologies Beyond CMOS New exciting opportunities are abounding in the field of body area networks, wireless communications, data networking, and optical imaging. In response to these developments, top-notch international experts in industry and academia present Circuits at the Nanoscale: Communications, Imaging, and Sensing. This volume, unique in both its scope and its focus, addresses the state-of-the-art in integrated circuit design in the context of emerging systems. A must for anyone serious about circuit design for future technologies, this book discusses emerging materials that can take system performance beyond standard CMOS. These include Silicon on Insulator (SOI), Silicon Germanium (SiGe), and Indium Phosphide (InP). Three-dimensional CMOS integration and co-integration with Microelectromechanical (MEMS) technology and radiation sensors are described as well. Topics in the book are divided into comprehensive sections on emerging design techniques, mixed-signal CMOS circuits, circuits for communications, and circuits for imaging and sensing. Dr. Krzysztof Iniewski is a director at CMOS Emerging Technologies, Inc., a consulting company in Vancouver, British Columbia. His current research interests are in VLSI ciruits for medical applications. He has published over 100 research papers in international journals and conferences, and he holds 18 international patents granted in the United States, Canada, France, Germany, and Japan. In this volume, he has assembled the contributions of over 60 world-reknown experts who are at the top of their field in the world of circuit design, advancing the bank of knowledge for all who work in this exciting and burgeoning area.