Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product. The Latest Silicon-on-Sapphire CMOS Design and Fabrication Techniques Develop high-performance SOS-based microsystems. Filled with examples, schematics, and charts, Silicon-on-Sapphire Circuits and Systems covers the latest analog and mixed-signal IC design techniques. Learn how to assemble SOI/SOS circuits and systems, work with an insulated substrate and device models, create miniaturized amplifiers and switches, and build ADCs and DACs. You will also find information on constructing photosensitive circuits and memory chips, deploying integrated biosensors, overcoming noise and power issues, and maximizing efficiency. Discover how to: Extract active and passive device models and parameters Design single-stage amplifiers, op amps, references, and comparators Build digital processors, data converters, and mixed-mode circuits Deploy photodetectors in active pixel sensor and imaging arrays Optimize performance, quantum efficiency, and signal-to-noise ratio Develop current and voltage mode SOS-based biosensors Use CMOS, monolithic, and digital phase-shift isolation techniques Integrate the latest three-dimensional assemblies and die packages

Silicon on sapphire is a recent microelectronic circuit technology originally devised to eliminate the drawbacks of conventional junction isolation. It has since developed into a high performance MOS-type integrated circuit family. In this report a description of this logic family is given, including such topics as manufacturing processes, device physics, and performance of commercial circuits. The report concludes with an overall evaluation of this technology. (Author).

Explains the circuit design of silicon optoelectronic integrated circuits (OEICs), which are central to advances in wireless and wired telecommunications. The essential features of optical absorption are summarized, as is the device physics of photodetectors and their integration in modern bipolar, CMOS, and BiCMOS technologies. This information provides the basis for understanding the underlying mechanisms of the OEICs described in the main part of the book. In order to cover the topic comprehensively, Silicon Optoelectronic Integrated Circuits presents detailed descriptions of many OEICs for a wide variety of applications from various optical sensors, smart sensors, 3D-cameras, and optical storage systems (DVD) to fiber receivers in deep-sub-μm CMOS. Numerous detailed illustrations help to elucidate the material.

Integrated circuit design for biomedical applications requires an interdisciplinary background, ranging from electrical engineering to material engineering to computer science. This book is written to help build the foundation for researchers, engineers, and students to further develop their interest and knowledge in this field. This book provides an overview of various biosensors by introducing fundamental building blocks for integrated biomedical systems. State-of-the-art projects for various applications and experience in developing these systems are explained in detail. Future design trends in this field is also discussed in this book.

Applied Solid State Science, Supplement 2: Silicon Integrated Circuits, Part A focuses on MOS device physics. This book is divided into three chapters—physics of the MOS transistor; nonvolatile memories; and properties of silicon-on-sapphire substrates devices, and integrated circuits. The topics covered include the short channel effects, MOSFET structures, floating gate devices, technology for nonvolatile semiconductor memories, sapphire substrates, and SOS integrated circuits and systems. The MOS capacitor, MIOS devices, and SOS process and device technology are also deliberated. This publication is a good source for students and individuals interested in MOS-based integrated circuits.

The authors investigated the formation of high-performance, device-quality, thin-film silicon (30 to 50 nm) on sapphire (TFSOS) for application to millimeter-wave communication and sensors. The resulting TFSOS, obtained by Solid Phase Epitaxy (SPE), and the growth of strained silicon-germanium (SiGe) layers on these TFSOS demonstrated enhanced devices and integrated circuit performance not achieved previously. The authors fabricated 250-nm and 100-nm T-gated devices with noise figures as low as 0.9 dB at 2 GHz and 2.5 dB at 20 GHz, with G(sub a) of 21 dB and 7.5 dB, respectively. The 250-nm devices resulted in distributed wideband amplifiers (10-GHz bandwidth BW, world record) and tuned amplifiers (15-dB, 4-GHz BW). The 100-nm devices produced voltage-controlled oscillators (VCOs) (25.9-GHz), 30-GHz frequency dividers. They also obtained f(sub t) (f (sub max)) of 105 GHz (50 GHz) for n-channel and 49 GHz (116 GHz, world record) for p-MODFETs (strained Si(0.2)Ge(0.8) on a relaxed Si(0.7)Ge(0.3) hetero-structure). This paper details the investigation and provides cost comparisons with competing technologies.