Contains papers from a December 1997 symposium on semiconductor radiation detectors for use in the energy range of a few eV to about 5 MeV. Primary emphasis is on developing semiconductor X-ray and gamma- ray detectors and imagers which combine the advantages of room- temperature operation with the excellent energy resolution of cryogenically cooled spectrometers. Papers are arranged in sections on cadmium zinc telluride growth, material properties, detectors, and systems; mercury and lead iodide materials, detectors, and systems; Group IV and III-V materials, detectors, and systems; ZnSe and ZnS materials and detectors; analysis and characteristics of detectors, systems, and applications; and IR materials and detectors. Annotation copyrighted by Book News, Inc., Portland, OR

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Sinc the dissolution of the Soviet Union the nuclear threats facing the world are complex and constantly evolving.This volume is structured to promote wide-ranging, multi-national exploration of critical technology needs and underlying scientific challenges to reducing the threat of nuclear/radiological terrorism; to illustrate through country-specific presentations how resulting technologies were used in national programs; and to outline the role of legal, policy and institutional frameworks in countering nuclear/radiological terrorism.

Proceedings of SPIE present the original research papers presented at SPIE conferences and other high-quality conferences in the broad-ranging fields of optics and photonics. These books provide prompt access to the latest innovations in research and technology in their respective fields. Proceedings of SPIE are among the most cited references in patent literature.

Volume IIIA Basic TechniquesHandbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures.Volume IIIB Materials, Processes, and TechnologyHandbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials.Volume IIIA Basic Techniques - Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. - Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth - Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology - Describes atomic level epitaxial deposition and other low temperature growth techniques - Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials - Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials