This book surveys the major and newly developed techniques for semiconductor strain metrology. Semiconductor strain metrology has emerged in recent years as a topic of great interest to researchers involved in thin film and nanoscale device characterizati

The scales involved in modern semiconductor manufacturing and microelectronics continue to plunge downward. Effective and accurate characterization of materials with thicknesses below a few nanometers can be achieved using x-rays. While many books are available on the theory behind x-ray metrology (XRM), X-Ray Metrology in Semiconductor Manufacturing is the first book to focus on the practical aspects of the technology and its application in device fabrication and solving new materials problems. Following a general overview of the field, the first section of the book is organized by application and outlines the techniques that are best suited to each. The next section delves into the techniques and theory behind the applications, such as specular x-ray reflectivity, diffraction imaging, and defect mapping. Finally, the third section provides technological details of each technique, answering questions commonly encountered in practice. The authors supply real examples from the semiconductor and magnetic recording industries as well as more than 150 clearly drawn figures to illustrate the discussion. They also summarize the principles and key information about each method with inset boxes found throughout the text. Written by world leaders in the field, X-Ray Metrology in Semiconductor Manufacturing provides real solutions with a focus on accuracy, repeatability, and throughput.

References Liquid-metal strain gages can be fabricated in either single- or delta-rosette configurations. Their main advantages are their low stiffness (essential for 1. Beatty, M.F. and Chewning, S. W., "Numerical Analysis of the Reinforcement Effect of a Strain Gage Applied to a Soft use on composites with soft, elastomeric matrices) Material," Int. J. Eng. Sci., 17, 907-915 (1979). and high elongation (at least 50 percent). Their prin 2. Pugin, V.A., "Electrical Strain Gauges for Measuring Large cipal disadvantages are a short shelf life and a Deformations," Soviet Rubber Industry, 19 (1), 23-26 (1960). nonlinear calibration curve. 3. Janssen, M.L. and Walter, J.D., "Rubber Strain Measurements in Bias, Belted Bias and Radial Ply Tires," J. Coated Fibrous Mat., 1, 102-117 (1971). 4. Patel, H.P., Turner, J.L., and Walter, J.D., "Radial Tire Cord-Rubber Composite," Rubber Chem. and Tech., 49, Acknowledgments 1095-1110 (1976). 5. Stone, J.E., Madsen, N.H., Milton, J.L., Swinson, W.F., and Turner, J.L., "Developments in the Design and Use of Liquid-Metal Strain Gages," EXPERIMENTAL MECHANICS, 23, The author acknowledges helpful suggestions by 129-139 (1983). Dr. Joseph D. Walter of Firestone Central Research 6. Whitney, R.J., "The Measurement of Volume Changes in Human Limbs, " J. Physiology, 121, 1-27 (1953).

This highly detailed handbook is a resource for those entering the field of stress analysis and instrumentation. The authors were brought together to provide their expert experience and have presented many practical solutions.

Nanoelectronics is changing the way the world communicates, and is transforming our daily lives. Continuing Moore’s law and miniaturization of low-power semiconductor chips with ever-increasing functionality have been relentlessly driving R&D of new devices, materials, and process capabilities to meet performance, power, and cost requirements. This book covers up-to-date advances in research and industry practices in nanometrology, critical for continuing technology scaling and product innovation. It holistically approaches the subject matter and addresses emerging and important topics in semiconductor R&D and manufacturing. It is a complete guide for metrology and diagnostic techniques essential for process technology, electronics packaging, and product development and debugging—a unique approach compared to other books. The authors are from academia, government labs, and industry and have vast experience and expertise in the topics presented. The book is intended for all those involved in IC manufacturing and nanoelectronics and for those studying nanoelectronics process and assembly technologies or working in device testing, characterization, and diagnostic techniques.

The design of mechanical components for various engineering applications requires the understanding of stress distribution in the materials. The need of determining the nature of stress distribution on the components can be achieved with experimental techniques. Applications and Techniques for Experimental Stress Analysis is a timely research publication that examines how experimental stress analysis supports the development and validation of analytical and numerical models, the progress of phenomenological concepts, the measurement and control of system parameters under working conditions, and identification of sources of failure or malfunction. Highlighting a range of topics such as deformation, strain measurement, and element analysis, this book is essential for mechanical engineers, civil engineers, designers, aerospace engineers, researchers, industry professionals, academicians, and students.

This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.