Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review o.

CONTENTS Preface, XI List of Contributors, XIII Part I. REPORTS. Materials Parameters Determining the Performance of 3-3 Piezocomposites C.R. Bowen, A. Perry, R. Stevens, and S. Mahon.............................................. 3 Dielectric Permittivity and Hysteresis of PZT Aerogels Stefan Geis, Jochen Fricke................................................................................ 23 Superfine Anomalies of the Cubic-Tetragonal Transition in the Perovskite-Type Ferroelectrics Detected by “mk-stabilized cell” Akira Kojima, Yukio Yoshimura, Hiroshi Iwasaki, and Ken-ichi Tozaki.......................................................................................... 33 NMR Study on m3h(seo4)2 (m: k, rb) Yasumitsu Matsuo, Keisuke Takahashi, and Seiichiro Ikehata............................. 51 Photovoltaic Effect in Pb(Zr,Ti)O3 (PZT)-Based Ceramics and Development for Photostrictor Application Kazuhiro Nonaka, Morito Akiyama, Chao-Nan Xu, Tsuyoshi Hagio, and Akira Takase.................................................................... 65 Novel Electronic Phase Transition in ii-vi Ferroelectric Semiconductor znO A. Onodera and H. Satoh................................................................................. 93 Brillouin Scattering Study of Structural Phase Transition in the kno3 Crystal Yasunari Takagi............................................................................................... 113 New Technologies for Future FeRAMs K. Uchiyama, M. Kazumura, Y. Shimada, T. Otsuki, N. Solayappan, V. Joshi, and C.A. Paz de Araujo............................................... 125 NANOCRYSTALLINE PEROVSKITE FILMS: FERROELECTRICS AND RELAXORS C. Ziebert, J.K. Krüger, H. Schmitt, A. Sternberg K.-H. Ehses, M. Marx................................................................................... 135 Part II. BRIEF REPORTS Studies of Ferroelectric Thin Film and Film-Based Device Processes via In Situ Analytic Techniques O. Auciello, S.K. Streiffer, G.B. Stephenson, J.A. Eastman, G. Bai, A.R. Krauss, J. Im, A.M. Dhote, C. Thompson, E.A. Irene, Y. Gao, A.H. Muller, M.J. Bedzyk, A. Kazimirov, D. Marasco, V.P. Dravid, A. Gruverman, S. Aggarwal, R. Ramesh, S.-H. Kim, A.I. Kingon, and C.B. Eom.................................................................................................. 155 The Spherical Random Bond – Random Field Model of Relaxor Ferroelectrics: Theory and Experiments R. Blinc, R. Pirc, B. Zalar, and A. Gregorovic.................................................... 159 Stabilization of Ferroelectricity in Quantum Paraelectrics by Isotopic Substitution A. Bussmann-Holder, H. Buttner, and A.R. Bishop............................................ 165 New Understanding of the Phases Transition Mechanism of Hydrogen-Bonded Ferroelectrics A. Bussmann-Holder, Naresh Dalal, Riqiang Fu, and Ricardo Migoni................... 167 Two Dimensional Ferroelectrics V.M. Fridkin, L.M. Blinov, S.P. Palto, S.G. Yudin, S. Ducharme, P.A. Dowben, and A.V. Bune.......................................................................... 169 Ferroelastic Twinning in Some Extremely Plastic Crystals Lyubov Kirpichnikova....................................................................................... 171 Investigation of the Anisotropy of srbi2ta2o9 and srbi2nb2o9 Through Epitaxial Growth J. Lettieri, M.A. Zurbuchen, Y. Jia, D.G. Schlom, S.K. Streiffer, and M.E. Hawley............................................................................................. 173 New Ideas in Relaxor Theory R.F. Mamin..................................................................................................... 179 Evaluation of Ferroelectric Domains in Lead Zirconate Titanate Ceramics by Poling Fields Toshio Ogawa.................................................................................................. 181 Metal-Organic Chemical Vapor Deposited Ceramic Thin Films for Future Memory Applications M. Schumacher, J. Lindner, F. Schienle, D. Burgess, P. Strzyzewski, M. Dauelsberg, E. Merz, and H. Juergensen............................... 185 Dynamic and Static Aspects of the Antiferroelectric Phase Transition in rb3h1-xdx(so4)2 Crystals: An 87rb-nmr Study Andreas Titze and Roland Boehmer.................................................................. 187 Key Word Index………………………………………………………………………. 189 Contents of FERROELECTRICS.Vol.2. Frontier in Science and Technology Series. List of Titles. FSRC BOOKS of ABSTRACTS in Science and Technology Conference Series. List of Titles. F S R C. A Brief Info.