Semiconductor Surfaces and Interfaces deals with structural and electronic properties of semiconductor surfaces and interfaces. The first part introduces the general aspects of space-charge layers, of clean-surface and adatom-included surfaces states, and of interface states. It is followed by a presentation of experimental results on clean and adatom-covered surfaces which are explained in terms of simple physical and chemical concepts and models. Where available, results of more refined calculations are considered. A final chapter is devoted to the band lineup at semiconductor interfaces.

This third edition has been thoroughly revised and updated. In particular it now includes an extensive discussion of the band lineup at semiconductor interfaces. The unifying concept is the continuum of interface-induced gap states.

Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success.

The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.

1. Carrier transport in artificially structured two-dimensional semiconductor systems / W. Walukiewicz -- 2. Miniband conduction in semiconductor superlattices / A. Sibille, J.F. Palmier, C. Minot -- 3. Barrier width dependence of optical properties in semiconductor superlattices / J.J. Song, J.F. Zhou and J.M. Jacob -- 4. Radiative processes in GaAs/AlGaAs heterostructures / P.O. Holtz, B. Monemar and J. Merz -- 5. Type-I-type-II transition in GaAs/AlAs superlattices / G.H. Li -- 6. Photoluminescence studies of interface roughness in GaAs/AlAs quantum well structures / D. Gammon, B.V. Shanabrook and D.S. Katzer -- 7. Optical and magneto-optical properties of narrow In[symbol]Ga[symbol]As-GaAs quantum wells / D.C. Reynolds and K.R. Evans -- 8. Growth and studies of antimony based III-V compounds by magnetron sputter epitaxy using metalorganic and solid elemental sources / J.B. Webb and R. Rousina -- 9. Properties of Cd[symbol]Mn[symbol]Te films and Cd[symbol]Mn[symbol]Te-CdTe superlattices grown by pulsed laser evaporation and epitaxy / J.M. Wrobel and J.J. Dubowski -- 10. Zn[symbol]Cd[symbol]Se[symbol]Te[symbol] quatenary II-VI wide bandgap alloys and heterostructures / R.E. Nahory, M.J.S.P. Brasil and M.C. Tamargo -- 11. Intersubband transitions in SiGe/Si quantum structures/ R.P.G. Karunasiri, K.L. Wang and J.S. Park -- 12. High-temperature discrete devices in 6H-SiC: sublimation epitaxial growth, device technology and electrical performance / M.M. Anikin [und weitere]