Following the biannual meetings in MUnster (1977) and Stanford (1979) the Third International Conference on Secondary Ion Mass Spectroscopy was held in Budapest from August 31 to September 5, 1981. The Conference was attended by about 250 participants. The success of the 1981 Conference in Budapest was especially due to the excellent preparation and organization by the Local Organizing Committee. We would also like to acknowledge the generous hospitality and cooperation of the Hungarian Academy of Sciences. Japan was chosen to be the location for the next conference in 1983. SIMS conferences are devoted to two main issues: improving the application of SIMS in different and especially new fields, and understanding the ion formation process. Needless to say, there is a very strong interaction be tween these two issues. The major reason for the rapid increase in SIMS activities in the last few years is the fact that SIMS is a powerful tool for bulk, thin-film, and surface analysis. Today it is extensively and successfully applied in such different fields as depth profiling and imaging of semiconductor devices, in isotope analysis of minerals, in imaging biological tissues, in the study of catalysts and catalytic reactions, in oxide-layer analysis on metals in drug detection, and in the analysis of body fluids.

The characterization of thin films and solid interfaces as well as the determina tion of concentration profiles in thin solid layers is one of the fields which re quire a rapid transfer of the results from basic research to technological applica tions and developments. It is the merit of the Dr. Wilhelm Heinrich and Else Heraeus-Stiftung to promote such a transfer by organizing high standard seminars mostly held at the "Physikzentrum" in Bad Honnef near Bonn. The present book has been stimulated by one of these seminars assembling most of the invited speakers as co-authors. The editor appreciates the cooperation of his colleagues contributing to this book. H. Oechsner Kaiserslautern, April 1984 v Contents 1. Introduction. ByH. Oechsner . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1. 1 Requirements for Thin Film and In-Depth Analysis . . . . . . . . . . . . . . . . . . . 1 1. 2 Object and Outl i ne of the Book . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4 References 2. The Application of Beam and Diffraction Techniques to Thin Film and Surface Micro-Analysis. By H. W. Werner (With 25 Fi gures) . . . . . . . . . . . . . . . . 5 2. 1 Methods to Determine Chemical Structures in Material Research 5 2. 2 Selected Analytical Features Used to Determine Chemical Structures 9 2. 2. 1 Depth Profi 1 ing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 a) Destructive Depth Profiling b) Nondestructive Methods for Depth and Thin Film Analysis 15 19 2. 2. 2 Microspot Analysis and Element Imaging 2. 3 Determining Physical Structures in Material Research . . . . . . . . . . . . . . . 27 2. 3. 1 X-Ray Diffraction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 2. 3. 2 X-Ray Double Crystal Diffraction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 2. 3.

Laser processing is now a rapidly increasing field with many real and potential applications in different areas of technology such as micromecha nics, metallurgy, integrated optics, and semiconductor device fabrication. The neces s ity for such soph i st i cated 1 i ght sources as 1 asers is based on the spatial coherence and the monochromaticity of laser light. The spatial coherence permits extreme focussing of the laser light resulting in the availability of high energy densities which can be used for strongly loca lized heat- and chemical-treatment of materials, with a resolution down to 1 ess than 1 lJIll. When us i ng pul sed or scanned cw-l asers, 1 oca 1 i zat i on in time is also possible. Additionally, the monochromaticity of laser light allows for control of the depth of heat treatment and/or selective, nonthermal bond breaking - within the surface of the material or within the molecules of the surrounding reactive atmosphere - simply by tuning the laser wavelength. These inherent advantages of laser light permit micromachining of materials (drilling, cutting, welding etc.) and also allow single-step controlled area processing of thin films and surfaces. Processes include structural transformation (removal of residual damage, grain growth in polycrystalline material, amorphization, surface hardening etc.), etching, doping, alloying, or deposition. In addition, laser processing is not 1 imited to planar substrates.

Volume 9: Historical Perspectives, Part A: The Development of Mass Spectrometry of The Encyclopedia of Mass Spectrometry describes and analyzes the development of many aspects of Mass Spectrometry. Beginning with the earliest types of Mass Analyzers, Historical Perspectives explores the development of many different forms of analytical processes and methods. The work follows various instruments and interfaces, to the current state of detectors and computerization. It traces the use of Mass Spectrometry across many different disciplines, including Organic Chemistry, Biochemistry, and Proteomics; Environmental Mass Spectrometry; Forensic Science; Imaging; Medical Monitoring and Diagnosis; Earth and Planetary Sciences; and Nuclear Science. Finally, the book covers the history of manufacturers and societies as well as the professionals who form the Mass Spectrometry community. Also available: Volume 9: Historical Perspectives, Part B: Notable People in Mass Spectrometry briefly reviews the lives and works of many of the major people who carried out this development. Preserves the history and development of Mass Spectrometry for use across scientific fields Written and edited by Mass Spectrometry experts Coordinates with Volume 9: Historical Perspectives, Part B: Notable People in Mass Spectrometry, a collection of short biographies on many of the major people who carried out this development

In recent years, ion implantation has developed into the major doping technique for integrated circuits. Several series of conferences have dealt with the application of ion implantation to semiconductors and other materials (Thousand Oaks 1970, Garmisch-Partenkirchen 1971, Osaka 1974, Warwick 1975, Boulder 1976, Budapest 1978, and Albany 1980). Another series of conferences was devoted more to implantation equipment and tech niques (Salford 1977, Trento 1978, and Kingston 1980). In connection with the Third International Conference on Ion Implantation: Equipment and Tech niques, held at Queen's University, ' Kingston, Ontario, Canada, July 8-11, 1980, a two-day instructional program was organized parallel to an implan tation conference for the first time. This implantation school concentra ted on aspects of implantation-equipment design. This book contains all lectures presented at the International Ion Implantation School organized in connection with the Fourth International Conference on Ion Implantation: Equipment and Techniques, held at the Convention Center, Berchtesgaden, Germany, September 13-17, 1982. In con trast to the first .school, the main emphasis in thiS school was placed on practical aspects of implanter operation and application. In three chap ters, various machine aspects of ion implantation (general concepts, ion sources, safety, calibration, dOSimetry), range distributions (stopping power, range profiles), and measuring techniques (electrical and nonelec tri ca 1 measu ri ng techni ques, annea 1 i ng) are di scussed. In the appendi x, a review of the state of the art in modern implantation equipment is given.