Serves as a practical reference for those involved in Secondary Ion Mass Spectrometry (SIMS) • Introduces SIMS along with the highly diverse fields (Chemistry, Physics, Geology and Biology) to it is applied using up to date illustrations • Introduces the accepted fundamentals and pertinent models associated with elemental and molecular sputtering and ion emission • Covers the theory and modes of operation of the instrumentation used in the various forms of SIMS (Static vs Dynamic vs Cluster ion SIMS) • Details how data collection/processing can be carried out, with an emphasis placed on how to recognize and avoid commonly occurring analysis induced distortions • Presented as concisely as believed possible with All sections prepared such that they can be read independently of each other

Following the biannual meetings in MUnster (1977) and Stanford (1979) the Third International Conference on Secondary Ion Mass Spectroscopy was held in Budapest from August 31 to September 5, 1981. The Conference was attended by about 250 participants. The success of the 1981 Conference in Budapest was especially due to the excellent preparation and organization by the Local Organizing Committee. We would also like to acknowledge the generous hospitality and cooperation of the Hungarian Academy of Sciences. Japan was chosen to be the location for the next conference in 1983. SIMS conferences are devoted to two main issues: improving the application of SIMS in different and especially new fields, and understanding the ion formation process. Needless to say, there is a very strong interaction be tween these two issues. The major reason for the rapid increase in SIMS activities in the last few years is the fact that SIMS is a powerful tool for bulk, thin-film, and surface analysis. Today it is extensively and successfully applied in such different fields as depth profiling and imaging of semiconductor devices, in isotope analysis of minerals, in imaging biological tissues, in the study of catalysts and catalytic reactions, in oxide-layer analysis on metals in drug detection, and in the analysis of body fluids.

This volume contains the proceedings of the Fifth International Confer ence on Secondary Ion Mass Spectrometry (SIMS V), held at the Capitol Holiday Inn, Washington, DC, USA, from September 30 to October 4, 1985. The conference was the fifth in a series of conferences held bienni ally. Previous conferences were held in Miinster (1977), Stanford (1979), Budapest (1981), and Osaka (1983). SIMS V was organized by Dr. R.J. Colton of the Nayal Research Lab oratory and Dr. D.S. Simons of the National Bureau of Standards un der the auspices of the International Organizing Committee chaired by Prof. A. Benninghoven of the Universitat Miinster. Dr. Richard F.K. Herzog served as the honorary chairman of SIMS V. While Dr. Herzog is best known to the mass spectrometry community for his theoretical development of a mass spectrometer design, known as the Mattauch-Herzog geometry, he also made several early and impor tant contributions to SIMS. In 1949, Herzog and Viehbock published a description of the first instrument designed to study secondary ions pro duced by bombardment from a beam of ions generated in a source that was separated from the sample by a narrow tube. Later at the GCA Cor poration, he brought together a team of researchers including H.J. Liebl, F.G. Riidenauer, W.P. Poschenrieder and F.G. Satkiewicz, who designed and built, and carried out applied research with the first commercial ion microprobe.

This book highlights the application of Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) for high-resolution surface analysis and characterization of materials. While providing a brief overview of the principles of SIMS, it also provides examples of how dual-beam ToF-SIMS is used to investigate a range of materials systems and properties. Over the years, SIMS instrumentation has dramatically changed since the earliest secondary ion mass spectrometers were first developed. Instruments were once dedicated to either the depth profiling of materials using high-ion-beam currents to analyse near surface to bulk regions of materials (dynamic SIMS), or time-of-flight instruments that produced complex mass spectra of the very outer-most surface of samples, using very low-beam currents (static SIMS). Now, with the development of dual-beam instruments these two very distinct fields now overlap.