Raman Scattering on Emerging Semiconductors and Oxides presents Raman scattering studies. It describes the key fundamental elements in applying Raman spectroscopies to various semiconductors and oxides without complicated and deep Raman theories. Across nine chapters, it covers: • SiC and IV-IV semiconductors, • III-GaN and nitride semiconductors, • III-V and II-VI semiconductors, • ZnO-based and GaO-based semiconducting oxides, • Graphene, ferroelectric oxides, and other emerging materials, • Wide-bandgap semiconductors of SiC, GaN, and ZnO, and • Ultra-wide gap semiconductors of AlN, Ga2O3, and graphene. Key achievements from the author and collaborators in the above fields are referred to and cited with typical Raman spectral graphs and analyses. Written for engineers, scientists, and academics, this comprehensive book will be fundamental for newcomers in Raman spectroscopy. Zhe Chuan Feng has had an impressive career spanning many years of important work in engineering and tech, including as a professor at the Graduate Institute of Photonics & Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei; establishing the Science Exploring Lab; joining Kennesaw State University as an adjunct professor, part-time; and at the Department of Electrical and Computer Engineering, Southern Polytechnic College of Engineering and Engineering Technology. Currently, he is focusing on materials research for LED, III-nitrides, SiC, ZnO, other semiconductors/oxides, and nanostructures and has devoted time to materials research and growth of III-V and II-VI compounds, LED, III nitrides, SiC, ZnO, GaO, and other semiconductors/oxides. Professor Feng has also edited and published multiple review books in his field, alongside authoring scientific journal papers and conference/proceeding papers. He has organized symposiums and been an invited speaker at different international conferences and universities. He has also served as a guest editor for special journal issues.

"Raman Scattering on Emerging Semiconductors and Oxides presents Raman scattering studies. It describes the key fundamental elements in applying Raman spectroscopies to various semiconductors and oxides without complicated and deep Raman theories. Across nine chapters, it covers: SiC and IV-IV semiconductors, III-GaN and Nitride semiconductors, III-V and II-VI semiconductors, ZnO-based and GaO-based semiconducting oxides, Graphene, ferroelectric oxides and other emerging materials, Wide band gap semiconductors of SiC, GaN and ZnO, and ultra-wide gap semiconductors of AlN, Ga2O3 and Graphene are emphasized. Key achievements from the author and collaborators in the above fields are referred and cited with typical Raman spectral graphs and analyses. Written for engineers, scientists, and academics, this comprehensive book will be fundamental for newcomers in Raman spectroscopy"--

are intended to fill the gap between a manufacturer's handbook, and review articles that highlight the latest scientific developments. A fourth volume will deal with techniques for specimen handling, beam artifacts, and depth profiling. It will provide a compilation of methods that have proven useful for specimen handling and treatment, and it will also address the common artifacts and problems associated with the bombardment of solid sur faces by photons, electrons, and ions. A description will be given of methods for depth profiling. Surface characterization measurements are being used increasingly in di verse areas of science and technology. We hope that this series will be useful in ensuring that these measurements can be made as efficiently and reliably as possible. Comments on the series are welcomed, as are suggestions for volumes on additional topics. C. J. Powell Gaithersburg, Maryland A. W. Czandema Golden, Colorado D. M. Hercules Pittsburgh, Pennsylvania T. E. Madey New Brunswick, New Jersey J. T. Yates, Jr.

Raman spectroscopy has a number of applications in various fields including material science, physics, chemistry, biology, geology, and medicine. This book illustrates necessary insight and guidance in the field of Raman spectroscopy with detailed figures and explanations. This presents deep understanding of new techniques from basic introduction to the advance level for scientists and engineers. The chapters cover all major aspects of Raman spectroscopy and its application in material characterization with special emphasis on both the theoretical and experimental aspects. This book is aimed to provide solid foundation of Raman spectroscopy to the students, scientists, and engineers working in various fields as mentioned above.

Researchers and engineers working in nuclear laboratories, nuclear electric plants, and elsewhere in the radiochemical industries need a comprehensive handbook describing all possible radiation-chemistry interactions between irradiation and materials, the preparation of materials under distinct radiation types, the possibility of damage of material