For 50 years the Fedorov Institute of Crystallography, Mineralogy, and Petrography at Leningrad Mining Institute has held annual memorial meetings for E. S. Fedorov. Immediate ly after the jubilee meeting (May 21-24, 1969), the Fedorov All-Union Symposium on Crystal Growth was held, and the proceedings of that symposium constitute Volume 9 of Growth of Crystals. The symposium surveyed the advances made in the USSR in those aspects of growth con cerned mainly with morphology and structure in natural crystals or closely related artificial ones, work which confirmed their relation to E. S. Fedorov and to mineralogical crystallogra phy. Crystallography is one of the older branches of natural science but has recently under gone a striking rejuvenation on account of new methods and new concepts. Photogoniometric methods have been developed in goniometry, while crystal optics has found new lines of ad vance in electrooptics and techniques in the ultraviolet and far infrared regions. Morphologic studies now use a vast range of techniques, from the hand lens to the electron microscope or cinemicrography. X-ray analysis is steadily becoming more automatic, and fast computers are used with accelerated methods of structure interpretation. Crystal growth is one of the younger divisions of crystallography; previously t it had been of interest only in experimental mineralogy, but now it is an important branch of science and technology with close relations to industry.

Growth of Crystals, Volume 21 presents a survey, with detailed analysis, of the scientific and technological approaches, and results obtained, by leading Russian crystal growth specialists from the late 1990's to date. The volume contains 16 reviewed chapters on various aspects of crystal and crystalline film growth from various phases (vapour, solution, liquid and solid). Both fundamental aspects, e.g. growth kinetics and mechanisms, and applied aspects, e.g. preparation of technically important materials in single-crystalline forms, are covered. A large portion of the volume is devoted to film growth, including film growth from eutectic melt, from amorphous solid state, kinetics of lateral epitaxy and film growth on specially structured substrates. An important chapter in this section covers heteroepitaxy of non-isovalent A3B5 semiconductor compounds, which have important applications in the field of photonics. The volume also includes a detailed analysis of the structural aspects of a broad range of laser crystals, information that is invaluable for successfully growing perfect, laser-effective, single crystals.

A unique text presenting practical information on the topic of nucleation and crystal growth processes from metastable solutions and melts Nucleation and Crystal Growth is a groundbreaking text thatoffers an overview and description of the processes and phenomena associated with metastability of solutions and melts. The author—a noted expert in the field—puts the emphasis on low-temperature solutions that are typically involved in crystallization in a wide range of industries. The text begins with a review of the basic knowledge of solutions and the fundamentals of crystallization processes. The author then explores topics related to the metastable state of solutions and melts from the standpoint of three-dimensional nucleation and crystal growth. Nucleation and Crystal Growth is the first text that contains a unified description and discussion of the many processes and phenomena occurring in the metastable zone of solutions and melts from the consideration of basic concepts of structure of crystallization. This important text: Outlines an interdisciplinary approach to the topic and offers an essential guide for crystal growth practitioners in materials science, physics, and chemical engineering Contains a comprehensive content that details the crystallization processes starting from the initial solutions and melts, all the way through nucleation, to the final crystal products Presents a unique focus and is the first book on understanding, and exploiting, metastability of solutions and melts in crystallization processes Written for specialists and researchers in the fields of materials science, condensed matter physics, and chemical engineering. Nucleation and Crystal Growth is a practical resource filled with hands-on knowledge of nucleation and crystal growth processes from metastable solutions and melts.

The Growth of Crystals series was begun in 1957 by A. V. Shubnikov and . N. N. SheftaP with the publication of the first volume. which contained the proceedings of the First All-Union Conference on Crystal Growth. The initiative and considerable efforts of the principal editor of the entire series. N. N. Sheftal', and his assistants led over the next 15 years to the publica tion of ten volumes which have assumed a leading position among the numerous books on crys tal growth. It has become traditional in this series to adopt a broad approach to crystal growth problems, and this approach is continued in Volumes 11 and 12, which are composed mainly of papers presented at the Fourth All-Union Conference on Crystal Growth in Tsakhkadzor. September 17-22, 1972. These papers, presented by both Soviet and foreign workers, deal with crystal growth processes. growth methods. and crystal perfection. Many of the papers reflect the tendency for our knowledge of crystallization processes to become increasingly more fundamental. with emphaSis on quantitative treatments. There are some extremely difficult problems in this approach. especially when the requirements of practical uses are envisaged. and many of these are discussed in various ways in these two volumes. These topics include detailed theoretical and experimental analysis of cooperative phenomena in crystallization. with emphasis not only on statistical thermodynamics but also statistical kinetics. This approach involves research on the structure and properties of phase boundaries. including the composition and structure of surface layers in liquids.

Defects in Solids, Volume 15: Etching of Crystals: Theory, Experiment, and Application focuses on the processes, reactions, and methodologies involved in the etching of crystals, including thermodynamics and diffusion. The publication first underscores the defects in crystals, detection of defects, and growth and dissolution of crystals. Discussions focus on thermodynamic theories, nature of pit sites, surface roughening during diffusion-controlled dissolution, growth controlled by simultaneous mass transfer and surface reactions, and chemical and thermal etching. The text then examines the theories of dissolution and etch-pit formation and the chemical aspects of the dissolution process, including catalytic reactions, dissolution of semiconductors, topochemical adsorption theories, and diffusion theories. The book tackles the solubility of crystals and complexes in solution and the kinetics and mechanism of dissolution. Topics include metallic crystals, semiconductors, stability of complexes, relationship between solubility, surface energy, and hardness of crystals, and solvents for crystals and estimation of crystal solubility in solvents other than water. The publication is a dependable source of data for readers interested in the etching of crystals.

Volumes 11 and 12 contain the papers read at the Fourth All-Union Conference on Crystal Growth in Tsakhkadzor, September 17-22, 1972; this volume contains papers on crystal growth from melts, from low-temperature solutions, hydrothermal solutions, and hot solutions, and also from the gas state, including processes involving reactions. In addition, there are papers on crystal perfection in relation to conditions of formation and the effects of electric and mag netic fields on crystallization. These papers reflect researches directed to the development and industrial production of perfect crystals required for advanced techniques in solid-state physics and chemistry, as well as for other purposes such as novel materials. There are many different scientific and technical problems in producing large perfect single crystals, and advances in this area made in the USSR and elsewhere are reflected in the papers in both volumes. On the one hand, any particular defective structure in a crystal originates from some mechanism and growth conditions; in particular, inclusions are trapped on account of the physicochemical parameters of the melt, the surface processes, and the sta bility of the growth front under particular crystallization conditions. Further, impurity trap ping is decisively influenced by the surface kinetics, growth-front stability, composition and structure of the boundary layer, any complexes present in the liquid, and (of course) the crys tallochemical relationships between the impurity and the crystal.