This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design. Provides a complete and concise introduction to SRAM bitcell design and analysis; Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis; Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices; Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.

This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design. Provides a complete and concise introduction to SRAM bitcell design and analysis; Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis; Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices; Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.

This volume comprises selected peer-reviewed proceedings of the 9th International Conference on Signal Processing and Integrated Networks (SPIN 2022). It aims to provide a comprehensive and broad-spectrum picture of state-of-the-art research and development in signal processing, IoT sensors, systems and technologies, cloud computing, wireless communication, and wireless sensor networks. This volume will provide a valuable resource for those in academia and industry.

ADVANCED ULTRA LOW-POWER SEMICONDUCTOR DEVICES Written and edited by a team of experts in the field, this important new volume broadly covers the design and applications of metal oxide semiconductor field effect transistors. This outstanding new volume offers a comprehensive overview of cutting-edge semiconductor components tailored for ultra-low power applications. These components, pivotal to the foundation of electronic devices, play a central role in shaping the landscape of electronics. With a focus on emerging low-power electronic devices and their application across domains like wireless communication, biosensing, and circuits, this book presents an invaluable resource for understanding this dynamic field. Bringing together experts and researchers from various facets of the VLSI domain, the book addresses the challenges posed by advanced low-power devices. This collaborative effort aims to propel engineering innovations and refine the practical implementation of these technologies. Specific chapters delve into intricate topics such as Tunnel FET, negative capacitance FET device circuits, and advanced FETs tailored for diverse circuit applications. Beyond device-centric discussions, the book delves into the design intricacies of low-power memory systems, the fascinating realm of neuromorphic computing, and the pivotal issue of thermal reliability. Authors provide a robust foundation in device physics and circuitry while also exploring novel materials and architectures like transistors built on pioneering channel/dielectric materials. This exploration is driven by the need to achieve both minimal power consumption and ultra-fast switching speeds, meeting the relentless demands of the semiconductor industry. The book’s scope encompasses concepts like MOSFET, FinFET, GAA MOSFET, the 5-nm and 7-nm technology nodes, NCFET, ferroelectric materials, subthreshold swing, high-k materials, as well as advanced and emerging materials pivotal for the semiconductor industry’s future.

This reference text covers a wide spectrum for designing robust embedded memory and peripheral circuitry. It will serve as a useful text for senior undergraduate and graduate students and professionals in areas including electronics and communications engineering, electrical engineering, mechanical engineering, and aerospace engineering. Discusses low-power design methodologies for static random-access memory (SRAM) Covers radiation-hardened SRAM design for aerospace applications Focuses on various reliability issues that are faced by submicron technologies Exhibits more stable memory topologies Nanoscale technologies unveiled significant challenges to the design of energy- efficient and reliable SRAMs. This reference text investigates the impact of process variation, leakage, aging, soft errors and related reliability issues in embedded memory and periphery circuitry. The text adopts a unique way to explain the SRAM bitcell, array design, and analysis of its design parameters to meet the sub-nano-regime challenges for complementary metal-oxide semiconductor devices. It comprehensively covers low- power-design methodologies for SRAM, exhibits more stable memory topologies, and radiation-hardened SRAM design for aerospace applications. Every chapter includes a glossary, highlights, a question bank, and problems. The text will serve as a useful text for senior undergraduate students, graduate students, and professionals in areas including electronics and communications engineering, electrical engineering, mechanical engineering, and aerospace engineering. Discussing comprehensive studies of variability-induced failure mechanism in sense amplifiers and power, delay, and read yield trade-offs, this reference text will serve as a useful text for senior undergraduate, graduate students, and professionals in areas including electronics and communications engineering, electrical engineering, mechanical engineering, and aerospace engineering. It covers the development of robust SRAMs, well suited for low-power multi-core processors for wireless sensors node, battery-operated portable devices, personal health care assistants, and smart Internet of Things applications.

This book includes high-quality papers presented at Second International Conference on Computational Electronics for Wireless Communications (ICCWC 2022), held at National Institute of Technology, Surathkal, Karnataka, India, during June 9 – 10, 2022. The book presents original research work of academics and industry professionals to exchange their knowledge of the state-of-the-art research and development in computational electronics with an emphasis on wireless communications. The topics covered in the book are radio frequency and microwave, signal processing, microelectronics, and wireless networks.