The Polymeric Materials Encyclopedia presents state-of-the-art research and development on the synthesis, properties, and applications of polymeric materials. This groundbreaking work includes the largest number of contributors in the world for a reference publication in polymer science, and examines many fields not covered in any other reference. With multiple articles on many subjects, the encyclopedia offers you a broad-based perspective on a multitude of topics, as well as detailed research information, figures, tables, illustrations, and references. Updates published as new research unfolds will continue to provide you with the latest advances in polymer science, and will keep the encyclopedia at the forefront of the field well into the future. From novices to experienced researchers in the field, anyone and everyone working in polymer science today needs this complete assessment of the state of the art. The entire 12-volume set will be available in your choice of printed or CD-ROM format.

Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.

Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2 thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO2-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.