The experimental procedure for reactively sputtering films of silicon nitride together with the methods for measuring the film thickness have been investigated. Some of the properties of these nitride films were studied. These properties included: infrared spectrum, etching properties, and index of refraction. The adherence of the films was also investigated. Research was conducted on the sputtering properties of silicon nitride. Some of the secondary parameters which affect the sputtering rate were studied. These parameters included: cathode-to-substrate distance, applied voltage, gas pressure, and time. The uniformity of the sputtered films was also investigated. The results of these experiments were similar to the results of many published reports on sputtering. The last area of research covered by this thesis was the masking ability of the silicon nitride films. It was found that these reactively sputtered silicon nitride films effectively masked against the diffusion of boron and phosphorus in silicon. The minimum masking thickness was also studied. The masking ability of these nitride films against zinc diffusion in gallium arsenide was not conclusively proven. It appeared that the nitride films were masking against zinc diffusion, but the results were erratic. It was concluded that the diffusion technique was producing these poor results. More work on masking in GaAs was suggested using different diffusant sources.

This is the first of three Gmelin Handbook volumes in the silicon se ries that will cover silicon nitride, a normaUy solid material with the idealized formula Si N . This volume, 3 4 "Silicon" Supplement Volume B Sc, is devoted to applications of silicon nitride in microelec tronics and solar ceUs. The compendium is the product of a critical selection among more than 17600 publications on silicon nitride issued up to January 1990. Out of a total of 5900 publications dealing with the fabrication and use of microelectronic devices (including 2400 Japanese patent applications), about 4000 papers have been selected for this volume. The current volume is grouped into three parts. Chapters 2 to 8 deal with general, non specific microelectronic applications of silicon nitride, Chapters 9 to 31 cover applications of silicon nitride in specific devices and device components, and Chapter 32 is devoted exclusively to applications in solar ceUs, including information on our general understanding of the role of silicon nitride in photovoltaic devices. Experimental results on the preparation of silicon nitride layers for application in unspeci fied devices are in Chapter 2. Whenever the preparation is in connection with specific devices, the information is presented in the respective chapters. The general preparation of silicon nitride layers is not covered in this volume, but will appear in "Silicon" Supplement Volume B 5a. See also the Introductory Remarks, Chapter 1, p. 1.