Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron's electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. - Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices - Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics - Details the properties of semiconductors for spintronics

This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. It is the first book on rare-earth doped III-Nitrides and semiconductors.

Developments in lasers continue to enable progress in many areas such as eye surgery, the recording industry and dozens of others. This book presents citations from the book literature for the last 25 years and groups them for ease of access which is also provided by subject, author and titles indexes.

Aimed at researchers and graduate students, this book provides up-to-date information about the electronic interactions that impact the optical properties of rare earth ions in solids. Its goal is to establish a connection between fundamental principles and the materials properties of rare-earth activated luminescent and laser optical materials. The theoretical survey and introduction to spectroscopic properties covers electronic energy level structure, intensities of optical transitions, ion-phonon interactions, line broadening, and energy transfer and up-conversion. An important aspect of the book lies in its deep and detailed discussions of materials properties and the potential of new applications such as optical storage, information processing, nanophotonics, and molecular probes that have been identified in recent experimental studies. This volume will be a valuable reference book on advanced topics of rare earth spectroscopy and materials science.