Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron's electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. - Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices - Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics - Details the properties of semiconductors for spintronics

A discussion of the theories, operating characteristics, and current technology of main fiber laser and amplifier devices based on rare-earth-doped silica and fluorozirconate fibers. It describes the principles, designs, and properties of the erbium-doped fiber amplifier and its role as the cornerstone component in optical communication systems. This second edition contains new and revised material reflecting major developments in academia and industry.

Optoelectronics ranks one of the highest increasing rates among the different industrial branches. This activity is closely related to devices which are themselves extremely dependent on materials. Indeed, the history of optoelectronic devices has been following closely that of the materials. KLUWER Academic Publishers has thus rightly identified "Materials for Optoelectronics" as a good opportunity for a book in the series entitled "Electronic Materials; Science and Technology". Although a sound background in solid state physics is recommended, the authors have confined their contribution to a graduate student level, and tried to define any concept they use, to render the book as a whole as self-consistent as possible. In the first section the basic aspects are developed. Here, three chapters consider semiconductor materials for optoelectronics under various aspects. Prof. G. E. Stillman begins with an introduction to the field from the point of view of the optoelectronic market. Then he describes how III-V materials, especially the Multi Quantum Structures meet the requirements of optoelectronic functions, including the support of microelectronics for optoelectronic integrated circuits. In chapter 2, Prof.

Aimed at researchers and graduate students, this book provides up-to-date information about the electronic interactions that impact the optical properties of rare earth ions in solids. Its goal is to establish a connection between fundamental principles and the materials properties of rare-earth activated luminescent and laser optical materials. The theoretical survey and introduction to spectroscopic properties covers electronic energy level structure, intensities of optical transitions, ion-phonon interactions, line broadening, and energy transfer and up-conversion. An important aspect of the book lies in its deep and detailed discussions of materials properties and the potential of new applications such as optical storage, information processing, nanophotonics, and molecular probes that have been identified in recent experimental studies. This volume will be a valuable reference book on advanced topics of rare earth spectroscopy and materials science.