This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. It is the first book on rare-earth doped III-Nitrides and semiconductors.

Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron's electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. - Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices - Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics - Details the properties of semiconductors for spintronics

This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. It is the first book on rare-earth doped III-Nitrides and semiconductors.

Advanced Rare Earth-Based Ceramic Nanomaterials focuses on recent advances related to preparation methods and applications of advanced rare earth-based ceramic nanomaterials. Different approaches for synthesizing rare earth-based ceramic nanomaterials are discussed, along with their advantages and disadvantages for applications in various fields. Sections cover rare earth-based ceramic nanomaterials like ceria and rare earth oxides (R2O3), rare earth vanadates, rare earth titanates, rare earth zirconates, rare earth stannates, rare earth-based tungstates, rare earth-based manganites, ferrites, cobaltites, nickelates, rare earth doped semiconductor nanomaterials, rare earth molybdates, rare earth-based nanocomposites, rare earth-based compounds for solar cells, and laser nanomaterials based on rare-earth compounds. - Reviews the chemistry and processing of rare earth doped ceramic nanomaterials and their characteristics and applications - Covers a broad range of materials, including ceria and rare earth oxides (R2O3), vanadates, titanates, zirconates, stannates, tungstates, manganites, ferrites, cobaltites, nickelates, rare earth doped semiconductor nanomaterials, rare earth molybdates, rare earth-based nanocomposites, rare earth-based compounds for solar cells, and laser nanomaterials based on rare-earth compounds - Includes different approaches to synthesizing each family of rare earth-based ceramic nanomaterials, along with their advantages and disadvantages - Provides green chemistry-based methods for the preparation of advanced rare earth-based ceramic nanomaterials

Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications, Second Edition reviews the fabrication, performance and applications of the technology, encompassing the state-of-the-art material and device development, along with considerations regarding nitride-based LED design. This updated edition is based on the latest research and advances, including two new chapters on LEDs for large displays and laser lighting. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques, the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. The book also addresses the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. It is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors. - Features new chapters on laser lighting, addressing the latest advances on this topic - Reviews fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development - Covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots - Highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infra-red emitters, and automotive lighting - Provides a comprehensive discussion of gallium nitride on both silicon and sapphire substrates

Cathodoluminescence (CL) is a non-destructive technique to characterize optical and electronic properties of nanostructures in many kinds of materials. Major subject is to investigate basic parameters in semiconductors, impurities in oxides and phase determination of minerals. CL gives information on carrier concentration, diffusion length and life time of minority carriers in semiconductors, and impurity concentration and phase composition in composite materials. This book involves 13 chapters to present the basics in the CL technique and applications to particles, thin films and nanostructures in semiconductors, oxides and minerals. The chapters covered in this book include recent development of CL technique and applications to wide range of materials used in modern material science.

Ion implantation presents a continuously evolving technology. While the benefits of ion implantation are well recognized for many commercial endeavors, there have been recent developments in this field. Improvements in equipment, understanding of beam-solid interactions, applications to new materials, improved characterization techniques, and more recent developments to use implantation for nanostructure formation point to new directions for ion implantation and are presented in this book.