Testing Static Random Access Memories covers testing of one of the important semiconductor memories types; it addresses testing of static random access memories (SRAMs), both single-port and multi-port. It contributes to the technical acknowledge needed by those involved in memory testing, engineers and researchers. The book begins with outlining the most popular SRAMs architectures. Then, the description of realistic fault models, based on defect injection and SPICE simulation, are introduced. Thereafter, high quality and low cost test patterns, as well as test strategies for single-port, two-port and any p-port SRAMs are presented, together with some preliminary test results showing the importance of the new tests in reducing DPM level. The impact of the port restrictions (e.g., read-only ports) on the fault models, tests, and test strategies is also discussed. Features: -Fault primitive based analysis of memory faults, -A complete framework of and classification memory faults, -A systematic way to develop optimal and high quality memory test algorithms, -A systematic way to develop test patterns for any multi-port SRAM, -Challenges and trends in embedded memory testing.

(Piano/Vocal/Guitar Artist Songbook). A baker's dozen songs from the 2013 chart-topping album by the French electronic music duo who composed the film score for Tron Legacy are presented in this matching folio arranged for piano, voice and guitar. Includes: Beyond * Contact * Doin' It Right * Fragments of Time * The Game of Love * Get Lucky * Giorgio by Moroder * Give Life Back to Music * Instant Crush * Lose Yourself to Dance * Motherboard * Touch * Within.

The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well.

A poetry selection that follows the upswell, downfall, and wake of 41 years of wrestling the muse.

Steven Hyden explores nineteen music rivalries and what they say about life in this "highly entertaining" book (Rolling Stone) perfect for every passionate music fan. Beatles vs. Stones. Biggie vs. Tupac. Kanye vs. Taylor. Who do you choose? And what does that say about you? Actually -- what do these endlessly argued-about pop music rivalries say about us? Music opinions bring out passionate debate in people, and Steven Hyden knows that firsthand. Each chapter in Your Favorite Band Is Killing Me focuses on a pop music rivalry, from the classic to the very recent, and draws connections to the larger forces surrounding the pairing. Through Hendrix vs. Clapton, Hyden explores burning out and fading away, while his take on Miley vs. Sinead gives readers a glimpse into the perennial battle between old and young. Funny and accessible, Hyden's writing combines cultural criticism, personal anecdotes, and music history -- and just may prompt you to give your least favorite band another chance.

Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons’ spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities.