Raman Scattering on Emerging Semiconductors and Oxides presents Raman scattering studies. It describes the key fundamental elements in applying Raman spectroscopies to various semiconductors and oxides without complicated and deep Raman theories. Across nine chapters, it covers: • SiC and IV-IV semiconductors, • III-GaN and nitride semiconductors, • III-V and II-VI semiconductors, • ZnO-based and GaO-based semiconducting oxides, • Graphene, ferroelectric oxides, and other emerging materials, • Wide-bandgap semiconductors of SiC, GaN, and ZnO, and • Ultra-wide gap semiconductors of AlN, Ga2O3, and graphene. Key achievements from the author and collaborators in the above fields are referred to and cited with typical Raman spectral graphs and analyses. Written for engineers, scientists, and academics, this comprehensive book will be fundamental for newcomers in Raman spectroscopy. Zhe Chuan Feng has had an impressive career spanning many years of important work in engineering and tech, including as a professor at the Graduate Institute of Photonics & Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei; establishing the Science Exploring Lab; joining Kennesaw State University as an adjunct professor, part-time; and at the Department of Electrical and Computer Engineering, Southern Polytechnic College of Engineering and Engineering Technology. Currently, he is focusing on materials research for LED, III-nitrides, SiC, ZnO, other semiconductors/oxides, and nanostructures and has devoted time to materials research and growth of III-V and II-VI compounds, LED, III nitrides, SiC, ZnO, GaO, and other semiconductors/oxides. Professor Feng has also edited and published multiple review books in his field, alongside authoring scientific journal papers and conference/proceeding papers. He has organized symposiums and been an invited speaker at different international conferences and universities. He has also served as a guest editor for special journal issues.

"Raman Scattering on Emerging Semiconductors and Oxides presents Raman scattering studies. It describes the key fundamental elements in applying Raman spectroscopies to various semiconductors and oxides without complicated and deep Raman theories. Across nine chapters, it covers: SiC and IV-IV semiconductors, III-GaN and Nitride semiconductors, III-V and II-VI semiconductors, ZnO-based and GaO-based semiconducting oxides, Graphene, ferroelectric oxides and other emerging materials, Wide band gap semiconductors of SiC, GaN and ZnO, and ultra-wide gap semiconductors of AlN, Ga2O3 and Graphene are emphasized. Key achievements from the author and collaborators in the above fields are referred and cited with typical Raman spectral graphs and analyses. Written for engineers, scientists, and academics, this comprehensive book will be fundamental for newcomers in Raman spectroscopy"--

Raman scattering is now being applied with increasing success to a wide range of practical problems at the cutting edge of materials science. The purpose of this book is to make Raman spectroscopy understandable to the non-specialist and thus to bring it into the mainstream of routine materials characterization. The book is pedagogical in approach and focuses on technologically important condensed-matter systems in which the specific use of Raman spectroscopy yields new and useful information. Included are chapters on instrumentation, bulk semiconductors and alloys, heterostructures, high-Tc superconductors, catalysts, carbon-based materials, wide-gap and super-hard materials, and polymers.

Defect-Induced Magnetism in Oxide Semiconductors provides an overview of the latest advances in defect engineering to create new magnetic materials and enable new technological applications. First, the book introduces the mechanisms, behavior, and theory of magnetism in oxide semiconductors and reviews the methods of inducing magnetism in these materials. Then, strategies such as pulsed laser deposition and RF sputtering to grow oxide nanostructured materials with induced magnetism are discussed. This is followed by a review of the most relevant postdeposition methods to induce magnetism in oxide semiconductors including annealing, ion irradiation, and ion implantation. Examples of defect-induced magnetism in oxide semiconductors are provided along with selected applications. This book is a suitable reference for academic researchers and practitioners and for people engaged in research and development in the disciplines of materials science and engineering. - Reviews the magnetic, electrical, dielectric and optical properties of oxide semiconductors with defect-induced magnetism - Discusses growth and post-deposition strategies to grow oxide nanostructured materials such as oxide thin films with defect-induced magnetism - Provides examples of materials with defect-induced magnetism such as zinc oxide, cerium dioxide, hafnium dioxide, and more

This book focuses on advanced optical spectroscopy techniques for the characterization of cutting-edge semiconductor materials. It covers a wide range of techniques such as Raman, infrared, photoluminescence, and cathodoluminescence (CL) spectroscopy, including an introduction to their physical fundamentals and best operating principles. Aimed at professionals working in the research and development of semiconductors and semiconductor materials, this book looks at a broad class of materials such as silicon and silicon dioxide, nano-diamond thin films, quantum dots, and gallium oxide. In addition to the spectroscopic techniques covered, this book features a chapter devoted to the use of a scanning electron transmission microscope as an excitation source for CL spectroscopy. Written by a practicing industry expert in the field, this book is an ideal source of reference and best-practices guide for physicists, as well as materials scientists and engineers involved in the area of spectroscopy of semiconductor materials. Further, this book introduces the cutting-edge spectroscopy such as optical photothermal IR and Raman spectroscopy or terahertz time-domain spectroscopy (THz-TDS) etc.