The fractional quantum Hall effect has opened up a new paradigm in the study of strongly correlated electrons and it has been shown that new concepts, such as fractional statistics, anyon, chiral Luttinger liquid and composite particles, are realized in two-dimensional electron systems. This book explains the quantum Hall effects together with these new concepts starting from elementary quantum mechanics.

After a foreword by Klaus von Klitzing, the first chapters of this book discuss the prehistory and the theoretical basis as well as the implications of the discovery of the Quantum Hall effect on superconductivity, superfluidity, and metrology, including experimentation. The second half of this volume is concerned with the theory of and experiments on the many body problem posed by fractional effect. Specific unsolved problems are mentioned throughout the book and a summary is made in the final chapter. The quantum Hall effect was discovered on about the hundredth anniversary of Hall's original work, and the finding was announced in 1980 by von Klitzing, Dorda and Pepper. Klaus von KIitzing was awarded the 1985 Nobel prize in physics for this discovery.

A pedagogical and self-contained discussion on monolayer and bilayer quantum Hall systems is given in this volume in a field-theoretical framework, with an introduction to quantum field theory, anyon physics and Chem-Simons gauge theory.

The fractional quantum Hall effect has been one of the most active areas of research in quantum condensed matter physics for nearly four decades, serving as a paradigm for unexpected and exotic emergent behavior arising from interactions. This book, featuring a collection of articles written by experts and a Foreword by Klaus von Klitzing, the discoverer of quantum Hall effect and winner of 1985 Nobel Prize in physics, aims to provide a coherent account of the exciting new developments and the current status of the field.

The experimental discovery of the fractional quantum Hall effect (FQHE) at the end of 1981 by Tsui, Stormer and Gossard was absolutely unexpected since, at this time, no theoretical work existed that could predict new struc tures in the magnetotransport coefficients under conditions representing the extreme quantum limit. It is more than thirty years since investigations of bulk semiconductors in very strong magnetic fields were begun. Under these conditions, only the lowest Landau level is occupied and the theory predicted a monotonic variation of the resistivity with increasing magnetic field, depending sensitively on the scattering mechanism. However, the ex perimental data could not be analyzed accurately since magnetic freeze-out effects and the transitions from a degenerate to a nondegenerate system complicated the interpretation of the data. For a two-dimensional electron gas, where the positive background charge is well separated from the two dimensional system, magnetic freeze-out effects are barely visible and an analysis of the data in the extreme quantum limit seems to be easier. First measurements in this magnetic field region on silicon field-effect transistors were not successful because the disorder in these devices was so large that all electrons in the lowest Landau level were localized. Consequently, models of a spin glass and finally of a Wigner solid were developed and much effort was put into developing the technology for improving the quality of semi conductor materials and devices, especially in the field of two-dimensional electron systems.

The discovery of the quantized and fractional Quantum Hall Effect phenomena is among the most important physics findings in the latter half of this century. The precise quantization of the electrical resistance involved in the quantized Hall effect phenomena has led to the new definition of the resistance standard and has metrologically affected all of science and technology. This resource consists of contributions from the top researchers in the field who present recent experimental and theoretical developments. Each chapter is self-contained and includes its own set of references guiding readers to original papers and further reading on the topic.

NMR in quantum Hall effect is described and electronic polarization at half-filled Landau levels is given. Important appendices are provided."--BOOK JACKET.