A process for the purification of cadmium metal by multiple treatment steps is described. Impurities in cadmium, as determined by emission spectrographic, mass spectrographic, and atomic absorption are given in tabular form. The preparation of various pure semiconductor materials of the Group II-VI compound type is discussed and tables of analytical data for each are included. The level of impurity concentration in synthesized cadmium sulfide was significantly lowered. Less than 1 part per million (atomic) total impurities was found by the mass spectrograph in two batches of CdS. The growth of crystals of pure II-VI compounds and mixtures of compounds from the melt is reported. Included are data concerning doping of melt grown crystals with various elemental dopants, and, in the case of some compound semiconductors, the maximum doping levels possible by this method. The results of vapor phase crystal growth of CdS and ZnS, are given. Preliminary experiments with hydrothermal and gel diffusion crystal growth are reported. (Author).

A process for the purification of cadmium metal by multiple treatment steps is described. Impurities in cadmium, as determined by emission spectrographic, mass spectrographic, and atomic absorption are given in tabular form. The preparation of various pure semiconductor materials of the Group II-VI compound type is discussed and tables of analytical data for each are included. The level of impurity concentration in synthesized cadmium sulfide was significantly lowered. Less than 1 part per million (atomic) total impurities was found by the mass spectrograph in two batches of CdS. The growth of crystals of pure II-VI compounds and mixtures of compounds from the melt is reported. Included are data concerning doping of melt grown crystals with various elemental dopants, and, in the case of some compound semiconductors, the maximum doping levels possible by this method. (Author).

The purification, by multiple treatment steps, of cadmium metal and elemental sulfur is described. Impurities in cadmium, as determined by emission spectrographic and atomic absorption analyses and impurities in sulfur determined by mass spectrographic analyses are given. The preparation of various pure semiconductor materials of the Group II-VI compound type is discussed and tables of analytical data for each are included. The level of impurity concentration in synthesized cadmium sulfide was significantly lowered. The growth of crystals of pure II-VI compounds and mixtures of compounds from the melt in the pressure furnaces is reported. Included are data concerning doping of melt grown crystals with various elemental dopings both singly and in pairs. Experiments on the growth of ZnO crystals by the hydrothermal method are given, along with the preparation and operating procedures used with the autoclave. Gel diffusion crystal growth experiments are also reported. (Author).