The International Symposium on Compound Semiconductors Award was initiated in 1976; the recipients are selected by the International Symposium on Compound Semiconductors Award Committee for outstanding research in the area of III-V compound semiconductors. The Heinrich Welker Award consists of $5000 and a plaque citing the recipient's contribution to the field. The Award, established by Siemens AG, Munich, honours the foremost pioneer in III-V compound semiconductor development.

This text constitutes the proceedings from the 25th IEEE International Symposium on Compound Semiconductors, which took place in 2000. Topics covered include emitter science and technology, heterostructure devices and quantum effect materials and devices.

The 24th Symposium attracted over 250 submissions, predominantly on growth and characterization. Compound semiconductors have become pervasive in applications that are unique and could not be addressed in any other viable manner, such as laser diodes in compact disk players, high brightness LEDs in automotive tail lights, low noise and low power amplifiers in cellular phones, infra-red diodes in remote controls, low noise amplifier front ends in televisions, and the recent high-brightness blue LEDs. Many of the contributions that engendered these novel products were first reported at the International Symposium on Compound Semiconductors. The procceedings of this conferences are an essential reference for all researchers in semiconductor physics, optoelectronics, electronic and electrical engineering, researching the properties and applications of compound materials.

Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices. Coverage in this volume reflects the increased interest and research funding in nitride-based materials; wide band-gap devices; mobile communications, including III-V-based transistors and photonic devices; crystal growth and characterization; and nanoscale phenomena, such as quantum wires, dots, and other low dimensional structures.