'Although the study of such defects is regularly examined at length in more general books on electron microscopy, this text in which they are centre-stage will surely be appreciated.' [Read Full Review]UltramicroscopyThis unique reference text provides those who are studying crystal lattice defects using a transmission electron microscope (TEM) with a basic knowledge of transmission electron microscopy. As it has been written for beginners, the principles of both transmission electron microscopy and crystallography have been clearly and simply explained, with the use of many figures and photographs to aid understanding. Mathematics is avoided where possible, and problems and exercises are amply provided.

This profusely illustrated text on Transmission Electron Microscopy provides the necessary instructions for successful hands-on application of this versatile materials characterization technique. The new edition also includes an extensive collection of questions for the student, providing approximately 800 self-assessment questions and over 400 questions suitable for homework assignment.

This groundbreaking text provides the necessary instructions for hands-on application of this versatile materials characterization technique and is supported by over 600 illustrations and diagrams.

Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.

Since the publication in 1979 of Introduction to Analytical Electron Microscopy (ed. J. J. Hren, J. I. Goldstein, and D. C. Joy; Plenum Press), analytical electron microscopy has continued to evolve and mature both as a topic for fundamental scientific investigation and as a tool for inorganic and organic materials characterization. Significant strides have been made in our understanding of image formation, electron diffraction, and beam/specimen interactions, both in terms of the "physics of the processes" and their practical implementation in modern instruments. It is the intent of the editors and authors of the current text, Principles of Analytical Electron Microscopy, to bring together, in one concise and readily accessible volume, these recent advances in the subject. The text begins with a thorough discussion of fundamentals to lay a foundation for today's state-of-the-art microscopy. All currently important areas in analytical electron microscopy-including electron optics, electron beam/specimen interactions, image formation, x-ray microanalysis, energy-loss spectroscopy, electron diffraction and specimen effects-have been given thorough attention. To increase the utility of the volume to a broader cross section of the scientific community, the book's approach is, in general, more descriptive than mathematical. In some areas, however, mathematical concepts are dealt with in depth, increasing the appeal to those seeking a more rigorous treatment of the subject.

This updated and revised edition of a classic work provides a summary of methods for numerical computation of high resolution conventional and scanning transmission electron microscope images. At the limits of resolution, image artifacts due to the instrument and the specimen interaction can complicate image interpretation. Image calculations can help the user to interpret and understand high resolution information in recorded electron micrographs. The book contains expanded sections on aberration correction, including a detailed discussion of higher order (multipole) aberrations and their effect on high resolution imaging, new imaging modes such as ABF (annular bright field), and the latest developments in parallel processing using GPUs (graphic processing units), as well as updated references. Beginning and experienced users at the advanced undergraduate or graduate level will find the book to be a unique and essential guide to the theory and methods of computation in electron microscopy.