This book provides an in-depth overview of design and implementation of leakage reduction techniques. The focus is on applicability, technology dependencies, and scalability. The book mainly deals with circuit design but also addresses the interface between circuit and system level design on the one side and between circuit and physical design on the other side.

Low Power Design in Deep Submicron Electronics deals with the different aspects of low power design for deep submicron electronics at all levels of abstraction from system level to circuit level and technology. Its objective is to guide industrial and academic engineers and researchers in the selection of methods, technologies and tools and to provide a baseline for further developments. Furthermore the book has been written to serve as a textbook for postgraduate student courses. In order to achieve both goals, it is structured into different chapters each of which addresses a different phase of the design, a particular level of abstraction, a unique design style or technology. These design-related chapters are amended by motivations in Chapter 2, which presents visions both of future low power applications and technology advancements, and by some advanced case studies in Chapter 9. From the Foreword: `... This global nature of design for low power was well understood by Wolfgang Nebel and Jean Mermet when organizing the NATO workshop which is the origin of the book. They invited the best experts in the field to cover all aspects of low power design. As a result the chapters in this book are covering deep-submicron CMOS digital system design for low power in a systematic way from process technology all the way up to software design and embedded software systems. Low Power Design in Deep Submicron Electronics is an excellent guide for the practicing engineer, the researcher and the student interested in this crucial aspect of actual CMOS design. It contains about a thousand references to all aspects of the recent five years of feverish activity in this exciting aspect of design.' Hugo de Man Professor, K.U. Leuven, Belgium Senior Research Fellow, IMEC, Belgium

One of the most notable features of nanometer scale CMOS technology is the increasing magnitude of variability of the key device parameters affecting performance of integrated circuits. The growth of variability can be attributed to multiple factors, including the difficulty of manufacturing control, the emergence of new systematic variation-generating mechanisms, and most importantly, the increase in atomic-scale randomness, where device operation must be described as a stochastic process. In addition to wide-sense stationary stochastic device variability and temperature variation, existence of non-stationary stochastic electrical noise associated with fundamental processes in integrated-circuit devices represents an elementary limit on the performance of electronic circuits. In an attempt to address these issues, Stochastic Process Variation in Deep-Submicron CMOS: Circuits and Algorithms offers unique combination of mathematical treatment of random process variation, electrical noise and temperature and necessary circuit realizations for on-chip monitoring and performance calibration. The associated problems are addressed at various abstraction levels, i.e. circuit level, architecture level and system level. It therefore provides a broad view on the various solutions that have to be used and their possible combination in very effective complementary techniques for both analog/mixed-signal and digital circuits. The feasibility of the described algorithms and built-in circuitry has been verified by measurements from the silicon prototypes fabricated in standard 90 nm and 65 nm CMOS technology.

1. 1 Power-dissipation trends in CMOS circuits Shrinking device geometry, growing chip area and increased data-processing speed performance are technological trends in the integrated circuit industry to enlarge chip functionality. Already in 1965 Gordon Moore predicted that the total number of devices on a chip would double every year until the 1970s and every 24 months in the 1980s. This prediction is widely known as "Moore's Law" and eventually culminated in the Semiconductor Industry Association (SIA) technology road map [1]. The SIA road map has been a guide for the in dustry leading them to continued wafer and die size growth, increased transistor density and operating frequencies, and defect density reduction. To mention a few numbers; the die size increased 7% per year, the smallest feature sizes decreased 30% and the operating frequencies doubled every two years. As a consequence of these trends both the number of transistors and the power dissi pation per unit area increase. In the near future the maximum power dissipation per unit area will be reached. Down-scaling of the supply voltage is not only the most effective way to reduce power dissipation in general it also is a necessary precondition to ensure device reliability by reducing electrical fields and device temperature, to prevent device degradation. A draw-back of this solution is an increased signal propa gation delay, which results in a lower data-processing speed performance.

Nowadays, CMOS technologies account for almost 90% of all integrated circuits (ICs). This book provides an essential introduction to CMOS ICs. The contents of this book are based upon a previous publication, entitled MOS ICs, which was published in Dutch and English by Delta Press (Amerongen, The Netherlands, 1990) and VCH (Weinheim, Germany, 1992), respectively. This book contains state-of-the-art material, but also focuses on aspects of scaling up to and beyond 0.1 mm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into various aspects of design, implementation and application. In contrast to other works on this topic, the book explores all associated disciplines of deep-submicron CMOS ICs, including physics, design, technology and packaging, low-power design and signal integrity. The text is based upon in-house Philips courseware, which, to date, has been completed by more than 1500 engineers. Carefully structured and enriched by hundreds of figures, photographs and in-depth exercises, the book is well-suited for the purpose of self-study.

The power consumption of microprocessors is one of the most important challenges of high-performance chips and portable devices. In chapters drawn from Piguet's recently published Low-Power Electronics Design, Low-Power CMOS Circuits: Technology, Logic Design, and CAD Tools addresses the design of low-power circuitry in deep submicron technologies. It provides a focused reference for specialists involved in designing low-power circuitry, from transistors to logic gates. The book is organized into three broad sections for convenient access. The first examines the history of low-power electronics along with a look at emerging and possible future technologies. It also considers other technologies, such as nanotechnologies and optical chips, that may be useful in designing integrated circuits. The second part explains the techniques used to reduce power consumption at low levels. These include clock gating, leakage reduction, interconnecting and communication on chips, and adiabatic circuits. The final section discusses various CAD tools for designing low-power circuits. This section includes three chapters that demonstrate the tools and low-power design issues at three major companies that produce logic synthesizers. Providing detailed examinations contributed by leading experts, Low-Power CMOS Circuits: Technology, Logic Design, and CAD Tools supplies authoritative information on how to design and model for high performance with low power consumption in modern integrated circuits. It is a must-read for anyone designing modern computers or embedded systems.

This book will introduce various power management integrated circuits (IC) design techniques to build future energy-efficient “green” electronics. The goal is to achieve high efficiency, which is essential to meet consumers’ growing need for longer battery lives. The focus is to study topologies amiable for full on-chip implementation (few external components) in the mainstream CMOS technology, which will reduce the physical size and the manufacturing cost of the devices.