This book provides a comprehensive description of the principles and applications of positron and positronium chemistry. Pedagogical and tutorial in nature, it will be ideal for graduate students and researchers in the area of positron annihilation spectroscopy. The contributing authors are authoritative scientists prominent in the frontiers of research, actively pursuing positron annihilation research on chemical and applied systems. Contents: Introduction to Positron and Positronium Chemistry (Y C Jean et al.); Compounds of Positrons and Positronium (D M Schrader); Experimental Techniques in Positron Spectroscopy (P G Coleman); Organic and Inorganic Chemistry of the Positron and Positronium (G Duplotre & I Billard); Physical and Radiation Chemistry of the Positron and Positronium (S V Stepanov & V M Byakov); Positrons and Positronium in the Gas Phase (D M Schrader); Positron Porosimetry (M H Weber & K G Lynn); Positron Annihilation Studies on Superconducting Materials (C S Sundar); Positronium in Si and SiO 2 Thin Films (R Suzuki); Applications to Polymers (P E Mallon); Applications of Slow Positrons to Polymeric Surfaces and Coatings (Y C Jean et al.); Positron Annihilation Induced Auger Spectroscopy (S Amdani et al.); Characterization of Nanoparticle and Nanopore Materials (J Xu); AMOC in Positron and Positronium Chemistry (H Stoll et al.). Readership: Materials science researchers; physical chemists; polymer scientists and engineers; chemical and mechanical engineers; solid state physicists; graduate students in chemistry, physics, engineering and polymer science; coating industry researchers."

This book provides a comprehensive overview of positron profilometry, specifically focusing on the analysis of defect depth distribution in materials. Positron profilometry plays a crucial role in understanding and characterizing defects in a wide range of materials, including metals, semiconductors, polymers, and ceramics. By analyzing the depth distribution of defects, researchers can gain insights into various material properties, such as crystal structure, defect density, and diffusion behavior. The author's extensive research spanning a period of two decades has primarily centered on subsurface zones. These regions, located beneath the surface and subjected to various surface processes, play a crucial role in generating defect distributions. Three experimental techniques and their data analysis are described in detail: a variable-energy positron beam (VEP) called sometimes a slow positron beam, a technique called implantation profile depth scanning (DSIP), and a sequential etching (SET) technique. The usability of these techniques is illustrated by many examples of measurements by the author and others.