This issue of ECS Transactions contains papers presented at the International Symposium on Plasma Processing. The symposium, 17th in the series, cosponsored by the Dielectric Science & Technology, Electronics, and Photonics Divisions was held as part of the 213th Meeting of The Electrochemical Society, Inc., in Phoenix, AZ, USA, May 18 - 23, 2008. A total of 14 papers were presented from Belgium, Germany, Italy, Japan, Republic of Korea, Russia, and the USA on topics mainly focused on diagnostics & measurements and etching & deposition processes.

This volume deals with the basic knowledge and understanding of fundamental interactions of low energy electrons with molecules. It pro vides an up-to-date and comprehensive account of the fundamental in teractions of low-energy electrons with molecules of current interest in modern technology, especially the semiconductor industry. The primary electron-molecule interaction processes of elastic and in elastic electron scattering, electron-impact ionization, electron-impact dissociation, and electron attachment are discussed, and state-of-the art authoritative data on the cross sections of these processes as well as on rate and transport coefficients are provided. This fundamental knowledge has been obtained by us over the last eight years through a critical review and comprehensive assessment of "all" available data on low-energy electron collisions with plasma processing gases which we conducted at the National Institute of Standards and Technology (NIST). Data from this work were originally published in the Journal of Physical and Chemical Reference Data, and have been updated and expanded here. The fundamental electron-molecule interaction processes are discussed in Chapter 1. The cross sections and rate coefficients most often used to describe these interactions are defined in Chapter 2, where some recent advances in the methods employed for their measurement or calculation are outlined. The methodology we adopted for the critical evaluation, synthesis, and assessment of the existing data is described in Chapter 3. The critically assessed data and recommended or suggested cross sections and rate and transport coefficients for ten plasma etching gases are presented and discussed in Chapters 4, 5, and 6.

We are at a critical evolutionary juncture in the research and development of low-temperature plasmas, which have become essential to synthesizing and processing vital nanoscale materials. More and more industries are increasingly dependent on plasma technology to develop integrated small-scale devices, but physical limits to growth, and other challenges, threaten progress. Plasma Processing of Nanomaterials is an in-depth guide to the art and science of plasma-based chemical processes used to synthesize, process, and modify various classes of nanoscale materials such as nanoparticles, carbon nanotubes, and semiconductor nanowires. Plasma technology enables a wide range of academic and industrial applications in fields including electronics, textiles, automotives, aerospace, and biomedical. A prime example is the semiconductor industry, in which engineers revolutionized microelectronics by using plasmas to deposit and etch thin films and fabricate integrated circuits. An overview of progress and future potential in plasma processing, this reference illustrates key experimental and theoretical aspects by presenting practical examples of: Nanoscale etching/deposition of thin films Catalytic growth of carbon nanotubes and semiconductor nanowires Silicon nanoparticle synthesis Functionalization of carbon nanotubes Self-organized nanostructures Significant advances are expected in nanoelectronics, photovoltaics, and other emerging fields as plasma technology is further optimized to improve the implementation of nanomaterials with well-defined size, shape, and composition. Moving away from the usual focus on wet techniques embraced in chemistry and physics, the author sheds light on pivotal breakthroughs being made by the smaller plasma community. Written for a diverse audience working in fields ranging from nanoelectronics and energy sensors to catalysis and nanomedicine, this resource will help readers improve development and application of nanomaterials in their own work. About the Author: R. Mohan Sankaran received the American Vacuum Society’s 2011 Peter Mark Memorial Award for his outstanding contributions to tandem plasma synthesis.

A Thorough Update of the Industry Classic on Principles of Plasma Processing The first edition of Principles of Plasma Discharges and Materials Processing, published over a decade ago, was lauded for its complete treatment of both basic plasma physics and industrial plasma processing, quickly becoming the primary reference for students and professionals. The Second Edition has been carefully updated and revised to reflect recent developments in the field and to further clarify the presentation of basic principles. Along with in-depth coverage of the fundamentals of plasma physics and chemistry, the authors apply basic theory to plasma discharges, including calculations of plasma parameters and the scaling of plasma parameters with control parameters. New and expanded topics include: * Updated cross sections * Diffusion and diffusion solutions * Generalized Bohm criteria * Expanded treatment of dc sheaths * Langmuir probes in time-varying fields * Electronegative discharges * Pulsed power discharges * Dual frequency discharges * High-density rf sheaths and ion energy distributions * Hysteresis and instabilities * Helicon discharges * Hollow cathode discharges * Ionized physical vapor deposition * Differential substrate charging With new chapters on dusty plasmas and the kinetic theory of discharges, graduate students and researchers in the field of plasma processing should find this new edition more valuable than ever.

VLSI Electronics: Microstructure Science, Volume 8: Plasma Processing for VLSI (Very Large Scale Integration) discusses the utilization of plasmas for general semiconductor processing. It also includes expositions on advanced deposition of materials for metallization, lithographic methods that use plasmas as exposure sources and for multiple resist patterning, and device structures made possible by anisotropic etching. This volume is divided into four sections. It begins with the history of plasma processing, a discussion of some of the early developments and trends for VLSI. The second section, Deposition, discusses deposition techniques for VLSI such as sputtering metals for metallization and contacts, plasma-enhanced chemical vapor deposition of metals and suicides, and plasma enhanced chemical vapor deposition of dielectrics. The part on Lithography presents the high-resolution trilayer resist system, pulsed x-ray sources for submicrometer x-ray lithography, and high-intensity deep-UV sources. The last part, Etching, provides methods in etching, like ion-beam etching using reactive gases, low-pressure reactive ion etching, and the uses of inert-gas ion milling. The theory and mechanisms of plasma etching are described and a number of new device structures made possible by anisotropic etching are enumerated as well. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.

This book gathers outstanding papers presented at the 17th Annual Conference of China Electrotechnical Society, organized by China Electrotechnical Society (CES), held in Beijing, China, from September 17 to 18, 2022. It covers topics such as electrical technology, power systems, electromagnetic emission technology, and electrical equipment. It introduces the innovative solutions that combine ideas from multiple disciplines. The book is very much helpful and useful for the researchers, engineers, practitioners, research students, and interested readers.