The self-assembled nanostructured materials described in this book offer a number of advantages over conventional material technologies in a wide range of sectors. World leaders in the field of self-organisation of nanostructures review the current status of research and development in the field, and give an account of the formation, properties, and self-organisation of semiconductor nanostructures. Chapters on structural, electronic and optical properties, and devices based on self-organised nanostructures are also included. Future research work on self-assembled nanostructures will connect diverse areas of material science, physics, chemistry, electronics and optoelectronics. This book will provide an excellent starting point for workers entering the field and a useful reference to the nanostructured materials research community. It will be useful to any scientist who is involved in nanotechnology and those wishing to gain a view of what is possible with modern fabrication technology. Mohamed Henini is a Professor of Applied Physics at the University of Nottingham. He has authored and co-authored over 750 papers in international journals and conference proceedings and is the founder of two international conferences. He is the Editor-in-Chief of Microelectronics Journal and has edited three previous Elsevier books. - Contributors are world leaders in the field - Brings together all the factors which are essential in self-organisation of quantum nanostructures - Reviews the current status of research and development in self-organised nanostructured materials - Provides a ready source of information on a wide range of topics - Useful to any scientist who is involved in nanotechnology - Excellent starting point for workers entering the field - Serves as an excellent reference manual

Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. - Reviews the materials science of nanostructures and their properties and applications in different electronic devices - Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys - Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition

This is the third volume in a series of books on selected topics in Nanoscale Science and Technology based on lectures given at the well-known Istituto Nazionale di Fisica Nucleare (INFN) schools of the same name. The present set of notes stems in particular from the participation and dedication of prestigious lecturers, such as Nunzio Motta, Fulvia Patella, Alexandr Toropov, and Anna Sgarlata. All lectures have been carefully edited and reworked, taking into account extensive follow-up discussions. A tutorial lecture by Motta et al. presents the analysis of the Poly(3-hexylthiophene) self assembly on carbon nanotubes and discusses how the interaction between the two materials forms a new hybrid nanostructure, with potential application to future solar cells technology. In their contribution, Patella et al. review quantum dots of III-V compounds, which offer appealing perspectives for more sophisticated applications in new generation devices such as single-photon emitters for nano-photonics and quantum computing. Focusing on self-assembled quantum dots, the chapter by Alexandr Toropov et al. provides a comprehensive review of some important aspects in the formation of quantum dots and presents the results of the authors’ extensive investigation of the features of droplet epitaxy. The fourth contribution, by Sgarlata et al., focuses on recent progress toward controlled growth of self-assembled nanostructures, dealing with the shaping, ordering and localization in Ge/Si heteroepitaxy and reviewing recent results on the self-organization of Ge nanostructures at Si surfaces.

Thin films play a key role in the material science of microelectronics, and the subject matter of thin-films divides naturally into two headings: processing / structure relationship, and structure / properties relationship.The first volume of Materials Science in Microelectronics focuses on the first relationship – that between processing and the structure of the thin-film. The state of the thin film's surface during the period that one monolayer exists - before being buried in the next layer – determines the ultimate structure of the thin film, and thus its properties. This volume takes into consideration the following potential influencing factors: crystal defects, void structure, grain structure, interface structure in epitaxial films, the structure of amorphous films, and reaction-induced structure.An ideal text or reference work for students and researchers in material science, who need to learn the basics of thin films.

This book describes the full range of possible strategies for laterally aligning self-assembled quantum dots on a substrate surface, beginning with pure self-ordering mechanisms and culminating with forced alignment by lithographic positioning. The text addresses both short- and long-range ordering phenomena and introduces future high integration of single quantum dot devices on a single chip. Contributions by well-known experts ensure that all relevant quantum-dot heterostructures are elucidated from diverse perspectives.