This book describes the newest implementations of integrated photodiodes fabricated in nanometer standard CMOS technologies. It also includes the required fundamentals, the state-of-the-art, and the design of high-performance laser drivers, transimpedance amplifiers, equalizers, and limiting amplifiers fabricated in nanometer CMOS technologies. This book shows the newest results for the performance of integrated optical receivers, laser drivers, modulator drivers and optical sensors in nanometer standard CMOS technologies. Nanometer CMOS technologies rapidly advanced, enabling the implementation of integrated optical receivers for high data rates of several Giga-bits per second and of high-pixel count optical imagers and sensors. In particular, low cost silicon CMOS optoelectronic integrated circuits became very attractive because they can be extensively applied to short-distance optical communications, such as local area network, chip-to-chip and board-to-board interconnects as well as to imaging and medical sensors.

Explains the circuit design of silicon optoelectronic integrated circuits (OEICs), which are central to advances in wireless and wired telecommunications. The essential features of optical absorption are summarized, as is the device physics of photodetectors and their integration in modern bipolar, CMOS, and BiCMOS technologies. This information provides the basis for understanding the underlying mechanisms of the OEICs described in the main part of the book. In order to cover the topic comprehensively, Silicon Optoelectronic Integrated Circuits presents detailed descriptions of many OEICs for a wide variety of applications from various optical sensors, smart sensors, 3D-cameras, and optical storage systems (DVD) to fiber receivers in deep-sub-μm CMOS. Numerous detailed illustrations help to elucidate the material.

This book covers the complete spectrum of the fundamentals of clocked, regenerative comparators, their state-of-the-art, advanced CMOS technologies, innovative comparators inclusive circuit aspects, their characterization and properties. Starting from the basics of comparators and the transistor characteristics in nanometer CMOS, seven high-performance comparators developed by the authors in 120nm and 65nm CMOS are described extensively. Methods and measurement circuits for the characterization of advanced comparators are introduced. A synthesis of the largely differing aspects of demands on modern comparators and the properties of devices being available in nanometer CMOS, which are posed by the so-called nanometer hell of physics, is accomplished. The book summarizes the state of the art in integrated comparators. Advanced measurement circuits for characterization will be introduced as well as the method of characterization by bit-error analysis usually being used for characterization of optical receivers. The book is compact, and the graphical quality of the illustrations is outstanding. This book is written for engineers and researchers in industry as well as scientists and Ph.D students at universities. It is also recommendable to graduate students specializing on nanoelectronics and microelectronics or circuit design.

Covers in detail promising solutions at the device, circuit, and architecture levels of abstraction after first explaining the sensitivity of the various MOS leakage sources to these conditions from the first principles. Also treated are the resulting effects so the reader understands the effectiveness of leakage power reduction solutions under these different conditions. Case studies supply real-world examples that reap the benefits of leakage power reduction solutions as the book highlights different device design choices that exist to mitigate increases in the leakage components as technology scales.

This book presents several circuits that are required for the full integration of an optical transmitter in standard CMOS. The main emphasis is placed on high-speed receivers with a bitrate of up to 1 Gb/s. The possibility of including the photodiode in a receiver is investigated and the problems encountered are discussed.

This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 12nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.

The book covers the entire topic from the basics of optoelectronics, device physics of photodetectors and light emitters, simulation of photodetectors, and technological aspects of optoelectronic integration in microelectronics to circuit aspects and practical applications. It summarizes the state of the art in integrated silicon optoelectronics and reviews recent publications on this topic. Results of basic research on silicon light emitters are included as well, while published results are compared with each other and with the work of the author.