This book highlights leading-edge research in multi-disciplinary areas in Physics, Engineering, Medicine, and Health care, from the 6th IRC Conference on Science, Engineering and Technology (IRC-SET 2020) held in July 2020 at Singapore. The papers were shortlisted after extensive rounds of reviews by a panel of esteemed individuals who are pioneers in their domains. The book also contains excerpts of the speeches by eminent personalities who graced the occasion, thereby providing written documentation of the event.

The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.