This new authoritative resource presents the basics of network analyzer measurement equipment and troubleshooting errors involved in the on-wafer microwave measurement process. This book bridges the gap between theoretical and practical information using real-world practices that address all aspects of on-wafer passive device characterization in the microwave frequency range up to 60GHz. Readers find data and measurements from silicon integrated passive devices fabricated and tested in advance CMOS technologies. Basic circuit equations, terms and fundamentals of time and frequency domain analysis are covered. This book also explores the basics of vector network analyzers (VNA), two port S-parameter measurement routines, signal flow graphs, network theory, error models and VNA calibrations with the use of calibration standards.

This groundbreaking book is the first to give an introduction to microwave de-embedding, showing how it is the cornerstone for waveform engineering. The authors of each chapter clearly explain the theoretical concepts, providing a foundation that supports linear and non-linear measurements, modelling and circuit design. Recent developments and future trends in the field are covered throughout, including successful strategies for low-noise and power amplifier design. This book is a must-have for those wishing to understand the full potential of the microwave de-embedding concept to achieve successful results in the areas of measurements, modelling, and design at high frequencies. With this book you will learn: The theoretical background of high-frequency de-embedding for measurements, modelling, and design Details on applying the de-embedding concept to the transistor’s linear, non-linear, and noise behaviour The impact of de-embedding on low-noise and power amplifier design The recent advances and future trends in the field of high-frequency de-embedding Presents the theory and practice of microwave de-embedding, from the basic principles to recent advances and future trends Written by experts in the field, all of whom are leading researchers in the area Each chapter describes theoretical background and gives experimental results and practical applications Includes forewords by Giovanni Ghione and Stephen Maas

This chapter aims to describe experimental tools and techniques used for on-wafer millimeter (mm)-wave characterizations of silicon-based devices under the small-signal regime. We discuss the basics of scattering parameters (S parameters), high-frequency (HF) noise concept and measurement facilities, and expert details concerning experimental procedures. In this chapter, we describe first the basic notions of the S-parameters concept and its limitations, as well of as those HF noise. Secondly, the main experimental tools such as mm-wave vectorial network analyzer, noise setup, and on-wafer station are depicted. The third part concerns the description and the methodology of on-wafer calibration and de-embedding techniques applied for mm-wave advanced silicon devices. Finally, the last section focuses on the presentation and description of several examples of device characterizations. The main objective of this chapter is to propose a tradeoff between basic information and details of experience.

Just as physical microwave measurements must be de-embedded from test fixtures by means of calibration, electromagnetic analysis must likewise be calibrated so the results may be de-embedded. This chapter investigates the nature of the electromagnetic analysis port discontinuity, how it is characterized by calibration, and how it is removed (including a possible reference plane shift) by de-embedding. Both double-delay and short-open calibration are described. The theory for single port calibration and de-embedding is presented in a manner that is easily extended to treat multiple coupled ports. Additional theory shows how to extend calibration to groups of internal ports, critical, for example, in analyzing the passive planar portion of an amplifier (both the input and output matching networks in the same analysis) and having internal calibrated ports for connecting the transistor. Evaluation of error (accuracy) is covered in detail. Techniques that take advantage of calibrated ports, including circuit subdivision and port tuning, are described.

Wireless communication technology has kept evolving into higher frequency regime to take advantage of wider data bandwidth and higher speed performance. Successful RF circuit design requires accurate characterization of on-chip devices. This greatly relies on robust de-embedding technique to completely remove surrounding parasitics of pad and interconnects that connect device to measurement probes. Complex interaction of fixture parasitic at high frequency has imposed extreme challenges to de-embedding particularly for lossy complementary metal oxide semiconductor (CMOS) device. A generalized network de-embedding technique that avoids any inaccurate lumped and transmission line assumptions on the pad and interconnects of the test structure is presented. The de-embedding strategy has been validated by producing negligible de-embedding error (

The first chapter is intended primarily for those readers who are new to the de-embedding concept. To serve as a gateway into this fascinating but also challenging field of knowledge, the present chapter will show how to extract the full potential of the microwave de-embedding concept, from the theoretical background to practical applications. As a broad definition, de-embedding can be regarded as the mathematical process by which electrical reference planes can be set to desired locations. Its importance originates from the fact that electrical characteristics are not always directly measurable at the reference planes of interest. Hence, moving the electrical reference planes mathematically enables one to discover precious information. With the aim to provide an introductory and comprehensive overview of the de-embedding concept, this chapter discusses its effectiveness for different purposes: measurements, modeling, and design. Experimental results will be analyzed to act as a valuable support for gaining a clear-cut understanding.

The chapter deals with two recently proposed characterization techniques of microwave transistors oriented to high-frequency power amplifier (PA) design. In particular, the nonlinear embedding and de-embedding design techniques are detailed, along with evidence of their advantages with respect to conventional design approaches in terms of power and frequency handling capability. The discussion also details the differences between the two techniques; despite the fact that they share the same theoretical basis, the techniques suffer from different critical facets. Finally, with the aim of guiding the reader towards full comprehension of the topic, different experimental examples are provided for transistor characterization and PA design.