Editorial Review Dr. Bakshi has compiled a thorough, clear reference text covering the important fields of EUV lithography for high-volume manufacturing. This book has resulted from his many years of experience in EUVL development and from teaching this subject to future specialists. The book proceeds from an historical perspective of EUV lithography, through source technology, optics, projection system design, mask, resist, and patterning performance, to cost of ownership. Each section contains worked examples, a comprehensive review of challenges, and relevant citations for those who wish to further investigate the subject matter. Dr. Bakshi succeeds in presenting sometimes unfamiliar material in a very clear manner. This book is also valuable as a teaching tool. It has become an instant classic and far surpasses others in the EUVL field. --Dr. Akira Endo, Chief Development Manager, Gigaphoton Inc. Description Extreme ultraviolet lithography (EUVL) is the principal lithography technology aiming to manufacture computer chips beyond the current 193-nm-based optical lithography, and recent progress has been made on several fronts: EUV light sources, optics, optics metrology, contamination control, masks and mask handling, and resists. This comprehensive volume is comprised of contributions from the world's leading EUVL researchers and provides all of the critical information needed by practitioners and those wanting an introduction to the field. Interest in EUVL technology continues to increase, and this volume provides the foundation required for understanding and applying this exciting technology. About the editor of EUV Lithography Dr. Vivek Bakshi previously served as a senior member of the technical staff at SEMATECH; he is now president of EUV Litho, Inc., in Austin, Texas.

As the requirements of the semiconductor industry have become more demanding in terms of resolution and speed it has been necessary to push photoresist materials far beyond the capabilities previously envisioned. Currently there is significant worldwide research effort in to so called Next Generation Lithography techniques such as EUV lithography and multibeam electron beam lithography. These developments in both the industrial and the academic lithography arenas have led to the proliferation of numerous novel approaches to resist chemistry and ingenious extensions of traditional photopolymers. Currently most texts in this area focus on either lithography with perhaps one or two chapters on resists, or on traditional resist materials with relatively little consideration of new approaches. This book therefore aims to bring together the worlds foremost resist development scientists from the various community to produce in one place a definitive description of the many approaches to lithography fabrication. - Assembles up-to-date information from the world's premier resist chemists and technique development lithographers on the properties and capabilities of the wide range of resist materials currently under investigation - Includes information on processing and metrology techniques - Brings together multiple approaches to litho pattern recording from academia and industry in one place

This book is a comprehensive guide to advanced processes and materials used in 193-nm immersion lithography (193i). It is an important text for those new to the field as well as for current practitioners who want to broaden their understanding of this latest technology. The book can be used as course material for graduate students of electrical engineering, material sciences, physics, chemistry, and microelectronics engineering and can also be used to train engineers involved in the manufacture of integrated circuits. It provides techniques for selecting critical materials (topcoats, photoresists, and antireflective coatings) and optimizing immersion processes to ensure higher performance and lower defectivity at lower cost. This book also includes sections on shrinking, trimming, and smoothing of the resist pattern to reduce feature sizes and line-edge roughness. Finally, it describes the recent development of 193i in combination with double exposure and double patterning.