Achieve accurate and reliable parameter extraction using a broad range of techniques and models provided.

Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.

All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.

Four leaders in the field of microwave circuit design share their newest insights into the latest aspects of the technology The third edition of Microwave Circuit Design Using Linear and Nonlinear Techniques delivers an insightful and complete analysis of microwave circuit design, from their intrinsic and circuit properties to circuit design techniques for maximizing performance in communication and radar systems. This new edition retains what remains relevant from previous editions of this celebrated book and adds brand-new content on CMOS technology, GaN, SiC, frequency range, and feedback power amplifiers in the millimeter range region. The third edition contains over 200 pages of new material. The distinguished engineers, academics, and authors emphasize the commercial applications in telecommunications and cover all aspects of transistor technology. Software tools for design and microwave circuits are included as an accompaniment to the book. In addition to information about small and large-signal amplifier design and power amplifier design, readers will benefit from the book’s treatment of a wide variety of topics, like: An in-depth discussion of the foundations of RF and microwave systems, including Maxwell’s equations, applications of the technology, analog and digital requirements, and elementary definitions A treatment of lumped and distributed elements, including a discussion of the parasitic effects on lumped elements Descriptions of active devices, including diodes, microwave transistors, heterojunction bipolar transistors, and microwave FET Two-port networks, including S-Parameters from SPICE analysis and the derivation of transducer power gain Perfect for microwave integrated circuit designers, the third edition of Microwave Circuit Design Using Linear and Nonlinear Techniques also has a place on the bookshelves of electrical engineering researchers and graduate students. It’s comprehensive take on all aspects of transistors by world-renowned experts in the field places this book at the vanguard of microwave circuit design research.

Discover the nonlinear methods and tools needed to design real-world microwave circuits with this tutorial guide. Balancing theoretical background with practical tools and applications, it covers everything from the basic properties of nonlinear systems such as gain compression, intermodulation and harmonic distortion, to nonlinear circuit analysis and simulation algorithms, and state-of-the-art equivalent circuit and behavioral modeling techniques. Model formulations discussed in detail include time-domain transistor compact models and frequency-domain linear and nonlinear scattering models. Learn how to apply these tools to designing real circuits with the help of a power amplifier design example, which covers all stages from active device model extraction and the selection of bias and terminations, through to performance verification. Realistic examples, illustrative insights and clearly conveyed mathematical formalism make this an essential learning aid for both professionals working in microwave and RF engineering and graduate students looking for a hands-on guide to microwave circuit design.

Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.

A practical, tutorial guide to the nonlinear methods and techniques needed to design real-world microwave circuits.